Ferromagnetic Si/Mn27Si47 core/shell nanowire arrays

Liu, Hailong; She, Guangwei; Ling, Shiting; Mu, Lixuan; Shi, Wensheng

doi:10.1063/1.3548939

Cited by 12 publications

(7 citation statements)

References 21 publications

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“…Electrons and holes would preferably transfer across the interface in opposite directions to form an excitonic charge separation state. , Absorption/emission of photons through separation/recombination between holes confined in one component and electrons confined in the other component occurs across the interface at a lower energy than the band gaps of either of the constituent semiconductors, adding a new dimension of band gap engineering. Therefore, type II core/shell nanostructures with multinary alloyed constituents may give a multidimensional control for band gap engineering to get highly tunable optoelectronic properties. − …”

mentioning

confidence: 99%

Arrays of ZnO/Zn_xCd_1–xSe Nanocables: Band Gap Engineering and Photovoltaic Applications

et al. 2011

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Arrays of ZnO/Zn(x)Cd(1-x)Se (0 ≤ x ≤ 1) core/shell nanocables with shells of tunable compositions have been synthesized on fluorine-doped tin oxide glass substrates via a simple ion-exchange approach. Through the effects of stoichiometry and type II heterojunction, optical absorptions of the nanocable arrays can be controllably tuned to cover almost the entire visible spectrum. Lattice parameters and band gaps of the ternary Zn(x)Cd(1-x)Se shells were found to have respectively linear and quadratic relationships with the Zn content (x). These ZnO/Zn(x)Cd(1-x)Se nanocable arrays are further demonstrated to be promising photoelectrodes for photoelectrochemical solar cells, giving a maximum power conversion efficiency up to 4.74%.

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mentioning

confidence: 99%

Arrays of ZnO/Zn_xCd_1–xSe Nanocables: Band Gap Engineering and Photovoltaic Applications

et al. 2011

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“…These nanowires had high room temperature resistivity (2.6 mOcm) and ferromagnetic magnetizations at 300 K. This can be compared to the FeSi nanowires grown by single-source precursor methods where the growth axis is along the (110) crystal axis and where transport measurements reveal a much smaller resistivity of 210 mOcm [160]. Another example of the differences that can occur between bulk and nanostructured materials has been observed in arrays Si/Mn 27 Si 47 core/shell nanowires synthesized by reacting Si nanowires with MnCl 2 at elevated temperatures [176]. These wires exhibited ferromagnetism with a Curie temperature of 150 K, much higher than that of bulk samples of MnSi 1.7 .…”

Section: Monosilicides and Monogermanides Nanostructure Devicesmentioning

confidence: 96%

Si-Based Magnetic Semiconductors

DiTusa

2015

Handbook of Spintronics

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The efforts over the past decade to identify and characterize magnetic semiconducting systems that would be compatible with present-day silicon technologies are reviewed. Investigations that have explored transition metal doping of the group IV semiconductors silicon and germanium are discussed along with intermetallic compounds such as silicides and germanides that may play the role of a magnetic semiconducting source of polarized electrons. Thin films and nanostructures of these materials have been grown by a number of synthesis techniques, and the resulting structural properties, including the important issue of homogeneity of dopants, are critically surveyed. The resulting magnetic and carrier transport properties are also reviewed. List of Abbreviations

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“…Although it has been reported that a higher manganese silicide-silicon core-shell structure is formed through the diffusion of Mn atoms into Si nanowires, the pure higher manganese silicide could be formed by optimization of the experimental conditions, such as reaction time, reaction temperature and amount of source material. 48 The high density of the nanostructures is still expected compared to the same volume of the corresponding bulk structures. However, the volumetric change during the material silicides synthesized from Si will affect the density of the resulting nanostructures.…”

Section: Syntheses Of Nanostructure Bundlesmentioning

confidence: 98%

“…The Mg-based compounds were originally considered to be one of the thermoelectric materials capable of operating above 200 ○ C. 4 On the other hand, higher manganese silicides (HMS) with a direct bandgap of about 0.7 eV, the important transition-metal silicides, are considered to be appropriate semiconducting materials for use in thermoelectric devices at high temperature due to their high Seebeck coefficient, low resistivity and high oxidation resistance. 1,27,48 The template synthesis using artificial Si nanowire arrays was previously reported by Tatsuoka et al for the synthesis of Mg 2 Si nanowire bundles treated under a Mg vapor. 49 The technique was also shown for the synthesis of MnSi 1:75 nanowires treated under a Mn vapor by Pokhrel et al later.…”

Section: Syntheses Of Nanostructure Bundlesmentioning

confidence: 99%

Syntheses of Nanostructure Bundles Based on Semiconducting Metal Silicides

Ishikawa

Tatsuoka

2013

Funct. Mater. Lett.

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A variety of nanostructure bundles and arrays based on semiconducting metal silicides have been synthesized using abundant and non-toxic starting materials. Three types of fabrication techniques of the nanostructure bundles or arrays, including direct growth, template synthesis using natural nanostructured materials and template synthesis using artificially fabricated nanostructured materials are demonstrated. CrSi 2 nanowire bundles were directly grown by the exposure of Si substrates to CrCl 2 vapor at atmospheric pressure. A hexagonal MoSi 2 nanosheet, Mg 2 Si/MgO composite nanowire and Mg 2 Si nanowire bundles and MnSi 1:7 nanowire array were synthesized using a MoS 2 layered material, a SiO x nanofiber bundle, a Si nanowire array, and a Si nanowire array as the templates, respectively. Additionally, the fabrication phenomenon and structural properties of the nanostructured semiconducting metal silicides were investigated. These reactions provided the low-cost and controllable synthetic techniques to synthesize large scale and one-dimensional semiconducting metal silicides for thermoelectric applications.Semiconducting metal silicides have been extensively investigated for silicon-based semiconducting technology and considered as promising materials for the renewable energy technology in the field of thermoelectric and photovoltaic applications. 1,2 Compared to the conventional semiconducting materials, the metal silicides have many advantages, such as low-cost, natural abundance, non-toxicity and easy recycling, therefore, they are considered as environmentally friendly semiconductor materials. Recently, a variety of metal silicides, for example, β-FeSi 2 , Mg 2 Si, MnSi 1:7 , hexagonal MoSi 2 and CrSi 2 , have been successfully grown by various growth techniques. 3-7 However, few metal silicide has been applied for the practical use, which is attributed to the modest figure of merit (ZT) of the metal silicides.One-dimensional nanostructures are attracting a great deal of attention due to their unique properties and novel applications compared to those of bulk materials. A decrease in the thermal conductivity and an increase in the power factor, S 2 , of the nanostructures have been demonstrated by the theoretical calculations and proof of principle experiments, relative to the corresponding bulk structures. [8][9][10][11] Hochbaum et al. reported that the Si nanowires with diameters of about 50 nm exhibit a 100-fold reduction in thermal conductivity, yielding ZT ¼ 0.6 at room temperature. 11 Various nanostructures have been synthesized and charactered, such as wires, rods, nails, ribbons, belts, sheets and rings. It is well-known that a single-walled carbon nanotube can be metallic or semiconductive, depending on the helical angle at which the graphitic sheet is rolled up, 12 which reveals the importance of controlling its morphological and structural properties. Unfortunately, the growth window for the specific morphology is narrow, namely the morphology can be significantly changed as wires, rods, ribbons...

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Ferromagnetic Si/Mn27Si47 core/shell nanowire arrays

Cited by 12 publications

References 21 publications

Arrays of ZnO/Zn_xCd_1–xSe Nanocables: Band Gap Engineering and Photovoltaic Applications

Arrays of ZnO/Zn_xCd_1–xSe Nanocables: Band Gap Engineering and Photovoltaic Applications

Si-Based Magnetic Semiconductors

Syntheses of Nanostructure Bundles Based on Semiconducting Metal Silicides

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Ferromagnetic Si/Mn27Si47 core/shell nanowire arrays

Cited by 12 publications

References 21 publications

Arrays of ZnO/ZnxCd1–xSe Nanocables: Band Gap Engineering and Photovoltaic Applications

Arrays of ZnO/ZnxCd1–xSe Nanocables: Band Gap Engineering and Photovoltaic Applications

Si-Based Magnetic Semiconductors

Syntheses of Nanostructure Bundles Based on Semiconducting Metal Silicides

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Arrays of ZnO/Zn_xCd_1–xSe Nanocables: Band Gap Engineering and Photovoltaic Applications

Arrays of ZnO/Zn_xCd_1–xSe Nanocables: Band Gap Engineering and Photovoltaic Applications