Preparation of Na-β-alumina films by laser chemical vapor deposition

Chen, Chi; Katsui, Hirokazu; Goto, Takashi

doi:10.1016/j.surfcoat.2015.06.019

Cited by 18 publications

(2 citation statements)

References 32 publications

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“…Laser CVD is a suitable method to synthesize materials containing volatile elements, because the irradiation of the high-power laser can activate precursors and chemical reactions locally at the substrate surface, avoiding the loss of volatile precursors. 17 19) We have demonstrated the synthesis of LiAlO films by laser CVD. 20) This study investigated the effect of the deposition temperature (T dep ) on the preferred orientation, microstructure, deposition rate (R dep ) and electrical properties of LiAl 5 O 8 films and reported the ionic conduction of LiAl 5 O 8 films.…”

Section: Introductionmentioning

confidence: 99%

Oriented growth and electrical property of LiAl5O8 film by laser chemical vapor deposition

Chen

Katsui

et al. 2016

J. Ceram. Soc. Japan

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LiAl 5 O 8 films were prepared by laser chemical vapor deposition, and the effect of the deposition temperature (T dep ) on the orientation, microstructure, and deposition rate was investigated. In the T dep range of 9801040 K, highly (110)-oriented LiAl 5 O 8 film comprising flake-like grains elongated to [110] with flatter face of (111) formed at the maximum deposition rate of 70¯m h ¹1 . Above T dep = 1050 K, dense LiAl 5 O 8 films slightly oriented to (100) were deposited with faceted columnar grains of pyramidal and terrace shapes. The electrical properties of the LiAl 5 O 8 films were examined using AC impedance spectroscopy. The complex plane plots of the dense LiAl 5 O 8 film consisted of a semicircle associated with the bulk response and an inclined spike, suggesting the ionic conduction in the LiAl 5 O 8 film.

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Section: Introductionmentioning

confidence: 99%

Oriented growth and electrical property of LiAl5O8 film by laser chemical vapor deposition

Chen

Katsui

et al. 2016

J. Ceram. Soc. Japan

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“…13,14) Laser chemical vapor deposition (LCVD) is a promising technique for depositing coatings at a high deposition rate with a wide variety of microstructures. [15][16][17] Zhang et al reported synthesis of epitaxial β-SiC films on Si substrates at high deposition rates (40 -3600 μm h −1 ) and low deposition pressures (200 -800 Pa). [18][19][20] Two types of regimes for the growth of (111)-oriented β-SiC films with different morphologies, namely, pyramid-like and needle-like, were observed.…”

Section: Introductionmentioning

confidence: 99%

Highly (111)-oriented SiC Films on Glassy Carbon Prepared by Laser Chemical Vapor Deposition

Li¹,

Katsui²,

Goto³

2016

J. Korean Ceram. Soc

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SiC films were prepared on glassy carbon substrates by laser chemical vapor deposition under a high pressure of 10 4 Pa using a diode laser (wavelength = 808 nm) and a polysilaethylene precursor. ( 111)-oriented SiC films were formed at a deposition temperature (T dep ) range of 1150 -1422 K. At T dep = 1262 K, the SiC film with a high Lotgering factor of above 0.96 showed an exhibited pyramid-like surface morphology and flower-like grains. The highest deposition rate (R dep ) was 220 µm h −1 at T dep = 1262 K.

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Chemical Vapor Deposition

Goto

Katsui

2017

Handbook of Solid State Chemistry

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Chemical vapor deposition (CVD) is a versatile technique for mainly preparing thin films typically used in semiconductor devices and protective coatings. Highly pure and dense self‐standing materials can be also prepared byCVDfollowed by removing the substrate after deposition. Without the substrate,CVDcan form powder or particles in a gas phase. In addition, by changing the wide‐ranged deposition condition ofCVD, it can be employed to discover new materials.CVDcan also be used to prepare highly oriented, anisotropic or porous materials.AsCVDgenerally adopts thermochemical reactions to prepare various forms of materials, it is fundamentally a high‐temperature process; this is sometimes disadvantageous for practical applications. In such cases, auxiliary energy such as plasma and photo (laser) can be employed to accelerate chemical reactions and enable low‐temperature deposition. This chapter mainly describes the preparation of films and various forms of materials byCVDand auxiliary energy‐assistedCVD.

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Preparation of Na-β-alumina films by laser chemical vapor deposition

Cited by 18 publications

References 32 publications

Oriented growth and electrical property of LiAl<sub>5</sub>O<sub>8</sub> film by laser chemical vapor deposition

Oriented growth and electrical property of LiAl<sub>5</sub>O<sub>8</sub> film by laser chemical vapor deposition

Highly (111)-oriented SiC Films on Glassy Carbon Prepared by Laser Chemical Vapor Deposition

Chemical Vapor Deposition

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