Preparation of nanostructured PbS thin films as sensing element for NO2 gas

Kaci, S.; Keffous, A.; Hakoum, S.; Trari, M.; Mansri, O.; Menari, H.

doi:10.1016/j.apsusc.2014.03.190

Cited by 24 publications

(5 citation statements)

References 24 publications

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“…Optical band gaps are commonly determined from Tauc plots constructed from transmittance data, and for PbS thin films many examples of this approach are present in the literature (Table S3). ,− However, we found optical band gap extraction from Tauc plots to be problematic in the case of PbS. The values extracted from Tauc plots of ∼100 nm thick PbS films deposited at different temperatures were unreasonably large (≥2.5 eV, Figure S10d–f) for the observed grain sizes (Figures S8, S9, and S11).…”

Section: Resultsmentioning

confidence: 91%

Atomic Layer Deposition of PbS Thin Films at Low Temperatures

et al. 2020

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Atomic layer deposition (ALD) is a viable method for depositing functional, passivating, and encapsulating layers on top of halide perovskites. Studies in that area have only focused on metal oxides, despite a great number of materials that can be made with ALD. This work demonstrates that, in addition to oxides, other ALD processes can be compatible with the perovskites. We describe two new ALD processes for lead sulfide. These processes operate at low deposition temperatures (45–155 °C) that have been inaccessible to previous ALD PbS processes. Our processes rely on volatile and reactive lead precursors Pb(dbda) (dbda = rac-N 2,N 3-di-tert-butylbutane-2,3-diamide) and Pb(btsa)2 (btsa = bis(trimethylsilyl)amide) as well as H2S. These precursors produce high quality PbS thin films that are uniform, crystalline, and pure. The films exhibit p-type conductivity and good mobilities of 10–70 cm2 V–1 s–1. Low deposition temperatures enable direct ALD of PbS onto a halide perovskite CH3NH3PbI3 (MAPI) without its decomposition. The stability of MAPI in ambient air is greatly improved by capping with ALD PbS. More generally, these new processes offer valuable alternatives for PbS-based devices, and we hope that this study will inspire more studies on ALD of non-oxides on halide perovskites.

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Section: Resultsmentioning

confidence: 91%

Atomic Layer Deposition of PbS Thin Films at Low Temperatures

et al. 2020

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“…It permits size quantization effects of size confinement [7]. This semiconductor is an important functional material and has been used in several applications such as IR detector [8], solar absorber [9], Pb 2+ ion-selective sensors [10], NO 2 , NH 3 and H 2 gas sensors [11][12][13]. In order to study the possibility to develop heterojunctions which could be suitable for applications in optoelectronic devices such as light emitting diodes, heterojunctions based on nc-MS/a-SiC:H (with M = Pb) were investigated.…”

Section: Introductionmentioning

confidence: 99%

Influence of Growth Conditions of Hydrogenated Amorphous Silicon Carbide on Optical Properties of the Interfacial Layer in SiC-Based Photodevice

et al. 2016

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“…Similar phenomenon is also reported in other kind of heterojunctions, like ITO/Si, 35 CuS nanotubes-ITO, 36 InN nanorods/Si 37 and so on. 26,38 As shown in Fig. 9, the I-V curve was non-linear and asymmetric due to the rectifying behavior of the heterojunction formed at the interfaces of PbS lm and ITO.…”

Section: I-v Characterizationmentioning

confidence: 99%

“…Noted that, over-grown grains were usually observed on lm surface, and they oen possessed arbitrary shapes, sizes and distribution. 23,26,27 Whereas, the over-grown grains with regular morphology and size were uniformly grown on PbS lm surface, which formed a kind of three-dimensional (3D) surface structure. In addition, much effort has been made to synthesize the lm with unique microstructure on its surface, which will construct 3D surface instead of traditional planar one.…”

Section: Surface Morphology and Lm Thicknessmentioning

confidence: 99%