Preparation of Q-Cadmium Sulfide Ultrathin Films by a New Liquid−Liquid Interface Reaction Technique (LLIRT)

Sathaye, Shivaram D.; Patil, K.R.; Paranjape, D. V.; Mitra, Anirban; Awate, and S. V.; Mandale, A.B.

doi:10.1021/la991276r

Cited by 45 publications

(35 citation statements)

References 19 publications

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“…Results and Discussion Films of CdS (ZnS) which were deposited by LLIRT were similar in nature to that reported in our earlier communication [12]. There CdS was characterised by the X-ray fluorescence technique.…”

supporting

confidence: 77%

“…Reduction in the PL intensity for the thicker deposits is correlated to the attenuation of the luminescence from the larger agglomerated crystallites of CdS (ZnS). The existence of nanometer size particles and their agglomeration for higher thicknesses have been experimentally confirmed for LLIRT technique in our previous communication [12]. .…”

mentioning

confidence: 57%

“…Ultrathin films of CdS and ZnS were chemically prepared by the liquid±liquid interface reaction technique (LLIRT) [12] and deposited onto the p-type porous silicon substrates. PL spectroscopy was extensively used for studying the light emission before and after the deposition.…”

mentioning

confidence: 99%

“…The thickness of porous layer was estimated to be 8±10 mm from the cross sectional SEM measurements. The samples were deposited with nanocrystalline films of CdS and ZnS by the method of LLIRT, the details of which are given in our earlier publication [12]. The thickness of the deposited films was measured using the Talystep instrument (Taylor Hobson).…”

mentioning

confidence: 99%

“…The change in the I±V characteristics for larger thickness of deposition of CdS and ZnS indicate the change in the forward resistance of the diode. Increase in the current density for the higher deposition thickness is expected because the crystallites of CdS (ZnS) get agglomerated as the number of overlayers is increased [12] and consequently the band gap of CdS (ZnS) reduces with the increasing size of crystallites. In effect, the built in potential across the heterojunction is reduced and therefore the forward current increases.…”

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confidence: 99%

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Optoelectronic Characterisation of Porous Silicon/CdS and ZnS Systems

Gokarna

Bhoraskar

Pavaskar

et al. 2000

phys. stat. sol. (a)

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Ultra thin films of CdS and ZnS were deposited on porous silicon by using the liquid±liquid interface reaction technique (LLIRT) which was similar to the Langmuir Blodgett method. The photoluminescence (PL) intensity after deposition of CdS and ZnS was observed to increase by more than two factors and was associated with a blue shift. Junction I±V characteristics were studied for various thicknesses of the deposited films. The rectifiying behaviour of I±V characteristics indicates the formation of junctions with porous silicon. Hall measurements were used to estimate the extrinsic properties of the overlayers as well as those of porous silicon. The change in the I±V characteristics after annealing of the deposited samples is also reported.Introduction Porous silicon which is obtained by electrochemical etching of silicon in diluted HF, at different current densities, is acquiring the status of a very important and versatile optoelectronic material. Of critical relevance to device implementation with this material are recent accounts stating efficient electroluminescence (EL) in porous silicon [1±3]. Formation of stable rectifying junctions with porous silicon, with good forward and reverse characteristics, is one of the most challenging problems for the proper exploitation of this material in the device industry. Recently, EL devices have been studied with various approaches. These approaches include simple metal/porous silicon junctions [4±6], hole injection at porous silicon/liquid interface [7±9], p±n porous silicon junctions [10] and conducting polymer [11] or ITO covered porous silicon structures.Present paper explores the possibility of using wide band gap II±VI semiconducting compounds, like CdS and ZnS, in conjunction with porous silicon for fabrication of electroluminescent devices. Ultrathin films of CdS and ZnS were chemically prepared by the liquid±liquid interface reaction technique (LLIRT) [12] and deposited onto the p-type porous silicon substrates. PL spectroscopy was extensively used for studying the light emission before and after the deposition. Formation of rectifying junctions in both these cases have been studied using I±V characteristics. Room temperature Hall measurements have been used for identifying the extrinsic activity of the surface of the semiconductor. This method provides an easy access of formation of heterojunctions at low temperatures.

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confidence: 77%

mentioning

confidence: 57%

mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Optoelectronic Characterisation of Porous Silicon/CdS and ZnS Systems

Gokarna

Bhoraskar

Pavaskar

et al. 2000

phys. stat. sol. (a)

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Composite PET Membrane with Nanostructured Ag/AgTCNQ Schottky Junctions: Electrochemical Nanofabrication and Charge‐Transfer Properties

Chen

Bian

et al. 2013

Chemistry A European J

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Large-area nanostructured Ag/Ag-tetracyanoquinodimethane (TCNQ) Schottky junctions are fabricated electrochemically on a mesoporous polyethylene terephthalate (PET) membrane-supported water/1, 2-dichloroethane (DCE) interface. When the interface is polarized, Ag(+) ions transfer across the PET membrane from the aqueous phase and are reduced to form metallic Ag on the PET membrane, which reacts further with tetracyanoquinodimethane (TCNQ) in the DCE phase to form nanostructured Ag/AgTCNQ Schottky junctions. Once the mesoporous membrane is blocked by metallic Ag, a bipolar mechanism is proposed to explain the successive growth of AgTCNQ nanorods and Ag film on each side of the PET membrane. Due to the well-formed nanostructure of Ag/AgTCNQ Schottky junctions, the direct electrochemical behavior is observed, which is essential to explain the physicochemical mechanism of its electric performance. Moreover, the composite PET membrane with nanostructured Ag/AgTCNQ Schottky junctions is tailorable and can be assembled directly into electric devices without any pretreatment.

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Interfacial Electric Properties Between W/O and Bicontinuous Microemulsions of SDS/n‐C₅H₁₁OH/n‐C₇H₁₆/H₂O System

2005

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In the system of SDS/n-C 5 H 11 OH/n-C 7 H 16 /H 2 O with the weight ratio of SDS/n-C 5 H 11 OH/H 2 O system at 5.0/47.5/47.5, the upper phase of the system was W/O microemulsion, and the lower phase was the bicontinuous microemulsion. When the n-heptane content was less than 1%, with the increase of the n-heptane content, the capacitance (C o , C od ) in the upper phase (W/O) dropped, the capacitance (C BI , C BId ) in the lower phase (BI) raised. At the same time, the W/O-BI interfacial potential (∆E), capacitance (C i ), and charge-transfer current (i ct ) decreased. After the n-heptane content reached 1%, with the increase of the n-heptane content, ∆E, C i and i ct demonstrated no significant change.

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Preparation of Q-Cadmium Sulfide Ultrathin Films by a New Liquid−Liquid Interface Reaction Technique (LLIRT)

Cited by 45 publications

References 19 publications

Optoelectronic Characterisation of Porous Silicon/CdS and ZnS Systems

Optoelectronic Characterisation of Porous Silicon/CdS and ZnS Systems

Composite PET Membrane with Nanostructured Ag/AgTCNQ Schottky Junctions: Electrochemical Nanofabrication and Charge‐Transfer Properties

Interfacial Electric Properties Between W/O and Bicontinuous Microemulsions of SDS/n‐C₅H₁₁OH/n‐C₇H₁₆/H₂O System

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Preparation of Q-Cadmium Sulfide Ultrathin Films by a New Liquid−Liquid Interface Reaction Technique (LLIRT)

Cited by 45 publications

References 19 publications

Optoelectronic Characterisation of Porous Silicon/CdS and ZnS Systems

Optoelectronic Characterisation of Porous Silicon/CdS and ZnS Systems

Composite PET Membrane with Nanostructured Ag/AgTCNQ Schottky Junctions: Electrochemical Nanofabrication and Charge‐Transfer Properties

Interfacial Electric Properties Between W/O and Bicontinuous Microemulsions of SDS/n‐C5H11OH/n‐C7H16/H2O System

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Interfacial Electric Properties Between W/O and Bicontinuous Microemulsions of SDS/n‐C₅H₁₁OH/n‐C₇H₁₆/H₂O System