Preparation of SiC Thin Film Using Organosilicon by Remote Plasma CVD Method

Abstract

An organosilicon compound, hexamethyldisilane (HMDS) was incorporated for SiC thin film preparation by remote plasma enhanced CVD method. We investigated how plasma excited radicals react with source monomers using two kinds of gas mixtures. It was found that film component and formation mechanism depends on stronger on plasma gases. Using a mixture of nitrogen and hydrogen gases as plasma gas source, deposited films contained large amounts of nitrogen. When uing an argon and hydrogen mixture, deposited film was a SiC with large hydrogen contents. In this research, we found that hydrogen radicals are very active for decomposition of monomer source gas and this can be related to precursors for film deposition. When using a mixture of argon and hydrogen as plasma gas, the film deposition speed was influenced by substrate temperature. The estimated activation energy was larger than the case of using nitrogen and hydrogen gases. Different reaction mechanisms were observed for different plasma gas source

Ion chemistry and ionic thin film deposition from HMDS‐photochemistry induced by VUV‐radiation from an atmospheric plasma

“…Atomic hydrogen is produced in a low-pressure hydrogen plasma and transported into the remote section, where it interacts with the precursor inducing fragmentation and subsequent deposition. [32][33][34][35][36][37][38][39][40][41] Atmospheric-pressure PE-CVD can enable continuous deposition on vacuum-sensitive surfaces, [42] but the deposition of defect-free films is even more of a challenge at atmospheric pressure, where collision rates are substantially higher. [43] This is supported by works on PE-CVD, which found an increasing particle size with higher pressure in PE-CVD.…”

“…Atomic hydrogen is produced in a low‐pressure hydrogen plasma and transported into the remote section, where it interacts with the precursor inducing fragmentation and subsequent deposition. [ 32–41 ]…”