Shock compaction experiments were carried out for Bi2223 to prepare a dense, oriented bulk specimen. The shocked specimen exhibited a high degree of crystallographic orientation and a high density, above 96%. The optimal condition of the crystallographic orientation was attained at a shock pressure of 5 GPa and at annealing temperatures between 750 and 800 • C. The post annealing of a specimen shocked at 5 GPa was effective in increasing M, indicating the introduction of pinning sites. The magnetic torque measurements showed that a high degree of orientation was attained and many pinning centres were induced by the shock loading.
Thc differential cross-sections for high-energy electrons scattered from water have been measured over a widc range of momentum transfers. The effect of chemical binding was seen from the comparison between the experiment and the calculation for an independent-atom model. The ab initio calculation using SCF M O was carried out with respect to the elastic scattering. It was in a good ;igrcement with the experiment and thus a reliable electron distribution in water was obtained.
An organosilicon compound, hexamethyldisilane (HMDS) was incorporated for SiC thin film preparation by remote plasma enhanced CVD method. We investigated how plasma excited radicals react with source monomers using two kinds of gas mixtures. It was found that film component and formation mechanism depends on stronger on plasma gases. Using a mixture of nitrogen and hydrogen gases as plasma gas source, deposited films contained large amounts of nitrogen. When uing an argon and hydrogen mixture, deposited film was a SiC with large hydrogen contents. In this research, we found that hydrogen radicals are very active for decomposition of monomer source gas and this can be related to precursors for film deposition. When using a mixture of argon and hydrogen as plasma gas, the film deposition speed was influenced by substrate temperature. The estimated activation energy was larger than the case of using nitrogen and hydrogen gases. Different reaction mechanisms were observed for different plasma gas source
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