Preparation of silicon cross-sectional specimens for TEM observation

Garulli, A.; Vanzi, Massimo; Giannini, M.; Armigliato, A.

doi:10.1016/0304-3991(83)90339-x

Cited by 12 publications

(9 citation statements)

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“…15 A Philips EM 400 T/FEG electron microscope operating at 120 k V and equipped with an ED AX PV 9100 energy dispersive microanalyzer was used to analyze the cross-sectioned contact structures. Some observations were also made with a Hitachi H-800 TEM operated at an accelerating voltage of 200 k V for penetration reasons.…”

Section: Methodsmentioning

confidence: 99%

Analytical electron microscopy of Al/TiN contacts on silicon for applications to very large scale integrated devices

Armigliato¹,

Valdrè

1987

Journal of Applied Physics

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Aluminum contacts on silicon have been realized for very large scale integration applications by interposing a titanium nitride diffusion barrier. The TiN films have been prepared by implanting nitrogen ions on silicon wafers coated with titanium layers of different thicknesses (60,80, and 100 nm); by a subsequent annealing in vacuum, films ofTiSi 2 , from ° up to 75 nm thick, grow at the nitride/silicon interface. The AI/TiN/Si and AI/TiN/TiSi 2 /Si structures have been annealed at 600 ·C for 30 and 10 min, which in some cases results in barrier degradation, due to AI/Si interdiffusion. Cross-sectioned specimens of these contacts have been studied by analytical transmission electron microscopy (AEM) employing a Philips EM 400T microscope, equipped with a field emission gun. It has been found that, contrary to previous suggestions, the TiN film does not dissolve during the failure process, but retains its morphology and a sharp interface with the neighboring layers. Unlike scanning electron microscopy experiments, where the Al film must be removed after the barrier degradation to investigate the pits formed by the massive migration of Si into AI, AEM on cross sections allowed us to make an accurate structural and compositional characterization of the material filling these pits. In addition, when the anneaiing treatment does not result in the barrier failure, the migration of AI, Ti, and Si throughout the structure can be easily detected and analyzed.

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Section: Methodsmentioning

confidence: 99%

Analytical electron microscopy of Al/TiN contacts on silicon for applications to very large scale integrated devices

Armigliato¹,

Valdrè

1987

Journal of Applied Physics

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“…TEM cross-sections were prepared according to a procedure [6] that involves glueing, sawing, mechanical lapping down to 20 #m, and ion-beam milling to perforation. For the X-ray microanalysis the cross-sections were preferred to the corresponding plan-sections.…”

Section: Methodsmentioning

confidence: 99%

Electron and ion beam analysis of composition and strain in Si-x Ge x /Si heterostructures

Armigliato¹,

Govoni²,

Balboni

et al. 1994

Mikrochim Acta

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Abstract. Sil_xGe x heterostructures have been grown by molecular beam epitaxy, with nominal compositions of 10 and 15 at %. Analytical electron microscopy, Rutherford backscattering spectrometry and ion channeling have been used in order to determine film thickness, Ge molar fraction and tetragonal distortion. The actual Ge concentrations were found to be smaller than the nominal ones. For all the SiGe films a coherent growth was found, with a small deviation from the perfect tetragonal distortion. The good agreement found between the results obtained by each analytical technique demonstrate that these methods of characterization are powerful tools for the control of the epitaxial layer parameters.

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“…Samples for the electron microscopy observations were prepared as cross sections by a standard procedure involving cutting, gluing and lapping down to 20 03BCm, followed by a final thinning step in a Gatan DuoMill ion beam miller [9]. Samples I and II were glued face to face in the same sandwich, in order to image areas of comparable thickness of the two samples in a single picture.…”

Section: Temmentioning

confidence: 99%