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Ion-implanted Si wafers were irradiated in air with a Q-switched ruby laser and then isochronally annealed between 450 and 850 degrees C. Within the depth corresponding to the melted thickness, a considerable amount of alpha-quartz was detected in the 700-800 degrees C range. Copper precipitation was observed associated with alpha-quartz formation. The role of a dissolved oxygen supersaturation, which seems to be generated by laser irradiation of air-exposed samples, is discussed briefly in the light of the use of laser annealing techniques for electronic device fabrication.

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