Preparation of Single- and Few-Layer Graphene Sheets Using Co Deposition on SiC Substrate

Li, Cun; Li, Dandan; Yang, Jingjing; Zeng, Xiaopeng; Yuan, Wenxia

doi:10.1155/2011/319624

Cited by 40 publications

(30 citation statements)

References 23 publications

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“…Therefore, Si atoms will be sublimated and the graphitization will be able to occur, where the C atoms on the top of surface are rearranged to synthesize the epitaxial graphene 4,[16][17][18][19] . In order to create alternative processes, some studies have shown that the addition of a layer of "catalyst material" (such as Ni or Co) promotes the reduction of the temperature required for SiC decomposition [23][24][25][26] . Nevertheless, despite SiC dissociation is promoted in this case, the Si sublimation does not occur; rather a chemical reaction to form a silicide phase between the catalyst material and Si happens.…”

Section: Introductionmentioning

confidence: 99%

Growth and Characterization of Graphene on Polycrystalline SiC Substrate Using Heating by CO2 Laser Beam

Galvão¹,

Vasconcelos²,

Santos³

et al. 2016

Mat. Res.

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The thermal decomposition of silicon carbide (SiC), with the subsequent formation of graphene, can be achieved by heating treatment. Several heating processes have been applied for this purpose by using SiC, either in form of powder particles or monocrystalline substrate. In this work, instead of using an expensive commercially available SiC wafer, a polycrystalline SiC substrate was obtained, based on powder metallurgy process, in order to explore the synthesis of graphene layers on its surface by using a CO 2 laser beam as heating source. Different levels of energy density (fluence) were applied and Raman spectroscopy analyses demonstrated that graphene layers were formed on the polycrystalline SiC surface. The ratio of the integrated intensity of the D and G bands, and the crystallite size were calculated. The FWHM of the 2D band peaks are in excellent agreement with the range of values found in the literature. The samples irradiated with energy density of 138.4 J/cm 2 presented lower concentration of defects and higher crystallite size, while the lowest FWHM was obtained for energy density of 188 J/cm 2 . The process occurred at room conditions and no gas flow was used. The results reveal a simple and cost-effective alternative for synthesis of graphene-based structures on SiC.

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Section: Introductionmentioning

confidence: 99%

Growth and Characterization of Graphene on Polycrystalline SiC Substrate Using Heating by CO2 Laser Beam

Galvão¹,

Vasconcelos²,

Santos³

et al. 2016

Mat. Res.

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“…It can be deposited using selective chemical reactions between Co film and SiC. 50 High thermal conductivity of SiC would be essential for both emitter and collector containing graphene. The surface 1 [ Fig.…”

Section: Theoretical Analysis Of Performance Of Solar Thermionic Enermentioning

confidence: 99%

Theoretical studies of thermionic conversion of solar energy with graphene as emitter and collector

Olawole

2018

J. Photon. Energy

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, "Theoretical studies of thermionic conversion of solar energy with graphene as emitter and collector," J. Photon. Energy 8(1), 018001 (2018), doi: 10.1117/1.JPE.8.018001. Abstract. Thermionic energy conversion (TEC) using nanomaterials is an emerging field of research. It is known that graphene can withstand temperatures as high as 4600 K in vacuum, and it has been shown that its work function can be engineered from a high value (for monolayer/ bilayer) of 4.6 eV to as low as 0.7 eV. Such attractive electronic properties (e.g., good electrical conductivity and high dielectric constant) make engineered graphene a good candidate as an emitter and collector in a thermionic energy converter for harnessing solar energy efficiently. We have used a modified Richardson-Dushman equation and have adopted a model where the collector temperature could be controlled through heat extraction in a calculated amount and a magnet can be attached on the back surface of the collector for future control of the spacecharge effect. Our work shows that the efficiency of solar energy conversion also depends on power density falling on the emitter surface, and that a power conversion efficiency of graphenebased solar TEC as high as 55% can be easily achieved (in the absence of the space-charge effect) through proper choice of work functions, collector temperature, and emissivity of emitter surfaces. Such solar energy conversion would reduce our dependence on silicon solar panels and offers great potential for future renewable energy utilization. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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“…First stage (Figure 16a) represents the initial situation dealing with pre-deposition of the Ni film on the SiC surface. Another approach involves the use of cobalt as a catalytic metal to form graphene layers and to lower the growth temperature [150][151][152]. Generally, cobalt can also react with silicon and leads to the formation of cobalt silicide.…”

Section: Alternative Approaches To Graphene Synthesis On Sicmentioning

confidence: 99%

“…Generally, cobalt can also react with silicon and leads to the formation of cobalt silicide. Meanwhile, the silicidation reaction with Co participation requires higher temperatures, compared with that by Ni [150]. Nevertheless, it is believed that such conditions can be favorable to lower the number of defects during the graphene formation and to improve the graphene quality [150].…”

Section: Alternative Approaches To Graphene Synthesis On Sicmentioning

confidence: 99%

“…Meanwhile, the silicidation reaction with Co participation requires higher temperatures, compared with that by Ni [150]. Nevertheless, it is believed that such conditions can be favorable to lower the number of defects during the graphene formation and to improve the graphene quality [150]. Similarly to the Ni-mediated process, the Co-assisted graphene formation is also very sensitive to changing the technological conditions (such as Co film thickness, annealing time, annealing temperature, cooling rate and heating rate) [151].…”

Section: Alternative Approaches To Graphene Synthesis On Sicmentioning

confidence: 99%

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Combining graphene with silicon carbide: synthesis and properties – a review

Shtepliuk

Khranovskyy

Yakimova

2016

Semicond. Sci. Technol.

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Being a true two-dimensional crystal, graphene possesses a lot of exotic properties that would enable unique applications. Integration of graphene with inorganic semiconductors, e.g. SiC promotes the birth of a class of hybrid materials which are highly promising for development of novel operations, since they combine the best properties of two counterparts in the frame of one hybrid platform. As a specific heterostructure, graphene on SiC performs strongly dependent on the synthesis method and the growth modes.In this paper a comprehensive review of the most relevant studies of graphene growth methods and mechanisms on SiC substrates has been carried out. The aim is to elucidate the basic physical processes that are responsible for the formation of graphene on SiC.First, an introduction is made covering some intriguing and not so often discussed properties of graphene. Then, we focus on integration of graphene with SiC which is facilitated by the nature of SiC to assume graphitization. As concerning the synthesis methods we discuss thermal decomposition of SiC, chemical vapor deposition and molecular beam epitaxy stressing that the first technique is the most common one when SiC substrates are used. In addition, we briefly appraise graphene synthesis via metal mediated carbon segregation.We address in detail the main aspects of the substrate effect such as substrate face polarity, offcut, kind of polytype and nonpolar surfaces on the growth of graphene layers. A comparison of graphene grown on the polar faces is made. In particular, growth of graphene on Si-face SiC is critically analyzed concerning growth kinetics and growth mechanisms taking into account the specific characteristics of SiC (0001) surfaces, such as the step-terrace structure and the unavoidable surface reconstruction upon heating. In all subtopics obstacles and solutions are featured. We complete the review with a short summary and concluding remarks. Outline

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Preparation of Single- and Few-Layer Graphene Sheets Using Co Deposition on SiC Substrate

Cited by 40 publications

References 23 publications

Growth and Characterization of Graphene on Polycrystalline SiC Substrate Using Heating by CO2 Laser Beam

Growth and Characterization of Graphene on Polycrystalline SiC Substrate Using Heating by CO2 Laser Beam

Theoretical studies of thermionic conversion of solar energy with graphene as emitter and collector

Combining graphene with silicon carbide: synthesis and properties – a review

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