Preparation of Sn doped SiO&lt;sub&gt;2&lt;/sub&gt; films using SiO&lt;sub&gt;2&lt;/sub&gt; and SnO&lt;sub&gt;2&lt;/sub&gt; mixture powder target by magnetron sputtering deposition

Kawasaki, Hiroharu; Ohshima, Tamiko; Yagyu, Yoshihito; Ihara, Takeshi; Suda, Yoshiaki

doi:10.14723/tmrsj.42.73

Cited by 8 publications

(5 citation statements)

References 19 publications

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“…In our previous work, titanium oxide thin films were prepared via sputtering deposition and PLD using a powder target. [26][27][28][29][30][31] These results demonstrated that functional thin films prepared via these methods using a powder target had a quality that was almost the same as those prepared using a bulk target.…”

Section: Introductionmentioning

confidence: 72%

Preparation of two-dimensional thin films by backside irradiation pulsed laser deposition method using powder target

Kawasaki

Ohshima

Yagyu

et al. 2019

Jpn. J. Appl. Phys.

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In this work, two-dimensional thin films were prepared by pulsed laser deposition (PLD) via backside irradiation. For this, a handmade transparent target holder made of quartz-glass was used to hold the powder targets. Visible-wavelength pulsed laser irradiation was applied from the holder side to the substrate. Using this new method, indium (In) and zinc (Zn)-concentrated thin films were prepared on a silicon substrate. The deposition rate of the film prepared with this method was calculated from the thickest position of the prepared film and the deposition time. The deposition rate was lower than for films prepared via conventional PLD. Two-dimensional profiles of the prepared films via backside irradiation PLD displayed a convex shape and its spatial resolution strongly depended on the laser profile. X-ray photoelectron spectroscopy measurements suggested that tailored In and Zn composition thin films could be prepared with this method using an In2O3 and ZnO powder target.

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Section: Introductionmentioning

confidence: 72%

Preparation of two-dimensional thin films by backside irradiation pulsed laser deposition method using powder target

Kawasaki

Ohshima

Yagyu

et al. 2019

Jpn. J. Appl. Phys.

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“…Powder technique was used in the process of adding powder of Bi to Sn, where the addition process is done based on weight ratios [6]. Tin and bismuth were used in the form of high purity powder up to 99.9%.…”

Section: Experimental Part (Sno 2 ) 1-x (Bi 2 O 3 ) X Thin Filmmentioning

confidence: 99%

“…Figure (6) present the relationship between voltages applied to a LCD cell and the current generated by the optical detector. Curves are divided into three zones: the first extends from A to B where the voltages increase from 0V to 4.7V and the optical current increases slightly and decreases again.…”

Section: Optical Propertiesmentioning

confidence: 99%

Studying the effect of impurities Bi2O3 to SiO2 used in LCD screens

Mohammed¹

2019

Tikrit J. Pure Sci.

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In this study, a liquid crystal display LCD cell was prepared. with the windows made from a thin film of SnO2 add to it Bi2O3 by weight (0,1,3,5,7)% .The effect of adding optical and electrical properties of the cell was studied. The thin film was prepared by vacuum evaporation technique. It was added to use powder mixing technique. The results showed a decrease in the value of the current passing through the cell and an increase in resistance value from 9.7MΩ to 12.5MΩ. The results also showed an increase in the cell's ability to control the light and darkness it with lower voltages by increasing the add rate. This leads to a decrease power used of a single cell. The value of the capacitance is not affected by the addition of Bi2O3 and was stable at ( 3nf ±1% ).

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“…We previously reported the preparation of functional thin films under various deposition conditions, including high-quality titanium dioxide (TiO 2 ) and zinc oxide (ZnO) films via the PVD method. 15,[21][22][23][24][25][26][27][28][29][30][31][32] We also prepared A6061 thin films via magnetron sputtering 15,16) on a small JIS S25C steel (S25C) substrate. The experimental results indicated that the A6061 film can be prepared on the S25C substrate, and the ∼40 μm thick A6061 film endowed the material with high hydrogen-entry resistance in corrosive environments.…”

Section: Introductionmentioning

confidence: 99%

Preparation of Ni-doped stainless steel thin films on metal to prevent hydrogen entry via sputter deposition with a powder target

Kawasaki

Nishikawa

Ohshima

et al. 2020

Jpn. J. Appl. Phys.

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Nickel-doped stainless steel thin films with high hydrogen-entry resistance were prepared on a metal and Si surface via sputter deposition. For this, mixed nickel oxide (NiO) and stainless steel (SUS304) powders were used as the sputtering target. The experimental results indicated that nickel-doped stainless steel thin films could successfully be prepared both on the stainless steel and Si substrate surface. XPS measurements demonstrated that the deposition rate was dependent on the processing conditions such as input RF power, and the thin-film Ni/SUS304 concentration ratio strongly depended on the powder target composition.

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Preparation of Sn doped SiO<sub>2</sub> films using SiO<sub>2</sub> and SnO<sub>2</sub> mixture powder target by magnetron sputtering deposition

Cited by 8 publications

References 19 publications

Preparation of two-dimensional thin films by backside irradiation pulsed laser deposition method using powder target

Preparation of two-dimensional thin films by backside irradiation pulsed laser deposition method using powder target

Studying the effect of impurities Bi2O3 to SiO2 used in LCD screens

Preparation of Ni-doped stainless steel thin films on metal to prevent hydrogen entry via sputter deposition with a powder target

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