Preparation of SrAl<sub>2</sub>O<sub>4</sub>:Eu Phosphor Thin Films    by Intense Pulsed Ion-Beam Evaporation

Sengiku, M.; Oda, Yoshikane; Jiang, Weihua; Yatsui, Kiyoshi; Ogura, Yukihiro; Kato, Keizo; Shinbo, Kazunari; Kaneko, Futao

doi:10.1143/jjap.40.1035

Cited by 17 publications

(8 citation statements)

References 11 publications

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“…Recently, SrAl 2 O 4 :Eu,Dy thin films were prepared by RF sputtering 4,5) and pulsed ionbeam evaporation (IBE). [6][7][8] The SrAl 2 O 4 :Eu,Dy thin films prepared by RF sputtering required heating of the substrate during the deposition. Therefore, low-melting point materials could not be used as substrates.…”

Section: Introductionmentioning

confidence: 99%

Preparation of SrAl₂O₄:Eu,Dy Phosphor Thin Films on Organic Substrates by Pulsed Ion-Beam Evaporation

Honda

Suzuki

Yunogami

et al. 2005

Jpn. J. Appl. Phys.

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Thin films of SrAl2O4:Eu,Dy were successfully deposited on polyethylene substrates at room temperature by pulsed ion-beam evaporation. From X-ray diffraction analysis results, the thin films were found to consist of a crystallized SrAl2O4:Eu,Dy phase. In the measurements of the photoluminescence properties of the thin films, broad peaks at 520 nm, which were characteristic of SrAl2O4:Eu,Dy phosphor, were observed. From the observation by scanning electron microscopy, the thin films were prepared on polyethylene substrates. From various observations, crystallized SrAl2O4:Eu,Dy phosphor thin films on polyethylene substrates were successfully obtained by IBE without damaging the substrates. These results suggest the possibility of IBE to deposit crystallized oxide thin films on various low-melting point substrates.

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Section: Introductionmentioning

confidence: 99%

Preparation of SrAl₂O₄:Eu,Dy Phosphor Thin Films on Organic Substrates by Pulsed Ion-Beam Evaporation

Honda

Suzuki

Yunogami

et al. 2005

Jpn. J. Appl. Phys.

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“…This method has been termed pulsed ion-beam evaporation (IBE). [1][2][3][4][5][6][7] Various thin films including B 12þx C 3Àx , 4,5) SrAl 2 O 4 : Eu 6) and TiFe 7) have been successfully prepared by IBE.…”

Section: Introductionmentioning

confidence: 99%

“…(5) A number of these spherical drops fly toward the substrate. (6) The remainder solidify and remain on the target surface in the form of spherical objects on top of projections.…”

Section: Introductionmentioning

confidence: 99%

Extinction of Large Droplets in Ion-Beam Ablation Plasma Produced by Ion-Beam Evaporation

Shishido

Yanagi

Kawahara

et al. 2005

Jpn. J. Appl. Phys.

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The extinction of large droplets in ablation plasma produced by intense pulsed ion-beam evaporation (IBE) has been proposed to improve the surface morphology of Al thin films on Si substrates. After the ion-beam irradiation of an Al target, a lot of spherical objects with diameters of approximately 20 to 100 µm were observed on the Al target surface, they are considered to be a possible origin of droplets commonly observed on Al thin films. However, the number of large droplets decreased with increasing distance between the Al target and Si substrate. The following model was considered to explain the obtained results. When a spherical object flies in the ablation plasma, it seems that the object fragments into small pieces or is evaporated. As a result, the number of large droplets decreases with increasing flight distance.

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“…A pulsed ion beam was focused on a target and dense ablation plasma from the target was deposited on substrates. By IBE, various crystallized thin films, including (Ba,Sr)TiO 3 [12] and SrAl 2 O 4 :Eu [13], were prepared at room temperature in vacuum. Thin films of B 12+x C 3-x were also prepared on Si single crystal substrates [14].…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric Properties of B_12+xC_3-x Thin Films Prepared by Pulsed Ion-Beam Evaporation

et al. 2001

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Thin films of boron carbide (B 12+x C 3-x ) were prepared on glass substrates by a pulsed ion-beam evaporation method. A pulsed proton beam with an energy of 1 MV (peak) and a current of 60 kA was focused on sintered B 12+x C 3-x targets. Ablation plasma was formed from the irradiated targets and thin films were prepared on Pyrex and SiO 2 glass substrates at room temperature. From results of X-ray diffraction, the thin films consisted of a B 12+x C 3-x phase. Using a known relationship between the composition and the lattice parameters, the composition of B 12+x C 3-x thin films was estimated to be x = 0.3 and 1.0, which were close to the nominal composition of the targets. These results indicate that B 12+x C 3-x with different carbon contents has been successfully prepared by IBE without substrate heating or sample annealing. Thermoelectric properties of the thin films were measured. A B 12+x C 3-x thin film with estimated composition of x =0.9 exhibited the highest power factor at room temperature among the B 12+x C 3-x samples reported.

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Preparation of SrAl₂O₄:Eu Phosphor Thin Films by Intense Pulsed Ion-Beam Evaporation

Cited by 17 publications

References 11 publications

Preparation of SrAl₂O₄:Eu,Dy Phosphor Thin Films on Organic Substrates by Pulsed Ion-Beam Evaporation

Preparation of SrAl₂O₄:Eu,Dy Phosphor Thin Films on Organic Substrates by Pulsed Ion-Beam Evaporation

Extinction of Large Droplets in Ion-Beam Ablation Plasma Produced by Ion-Beam Evaporation

Thermoelectric Properties of B_12+xC_3-x Thin Films Prepared by Pulsed Ion-Beam Evaporation

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Preparation of SrAl2O4:Eu Phosphor Thin Films by Intense Pulsed Ion-Beam Evaporation

Cited by 17 publications

References 11 publications

Preparation of SrAl2O4:Eu,Dy Phosphor Thin Films on Organic Substrates by Pulsed Ion-Beam Evaporation

Preparation of SrAl2O4:Eu,Dy Phosphor Thin Films on Organic Substrates by Pulsed Ion-Beam Evaporation

Extinction of Large Droplets in Ion-Beam Ablation Plasma Produced by Ion-Beam Evaporation

Thermoelectric Properties of B12+xC3-x Thin Films Prepared by Pulsed Ion-Beam Evaporation

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Preparation of SrAl₂O₄:Eu Phosphor Thin Films by Intense Pulsed Ion-Beam Evaporation

Preparation of SrAl₂O₄:Eu,Dy Phosphor Thin Films on Organic Substrates by Pulsed Ion-Beam Evaporation

Preparation of SrAl₂O₄:Eu,Dy Phosphor Thin Films on Organic Substrates by Pulsed Ion-Beam Evaporation

Thermoelectric Properties of B_12+xC_3-x Thin Films Prepared by Pulsed Ion-Beam Evaporation