Preparation of Textured Growth Pb(Zr,Ti)O 3 Thin Films on Si Substrate Using SrTiO 3 as Buffer Layers

Abstract

PZT thin films are deposited on SiO 2 /Si substrate by metallo-organic decomposition (MOD) process, using SrTiO 3 (STO) as buffer layer for textured growth. The STO layers deposited on SiO 2 /Si substrate by pulsed laser deposition process show (100)/(200) preferred orientation, whereas the STO buffer layer deposited on silica substrate using spin-coating technique show random orientation behavior. The use of STO as buffer layers enhanced the crystallization and the preferred orientations of the PZT films. The PZT on STO buffered SiO 2 /Si substrates thus obtained possess high refractive index, (n) PZT/STO = 2.1159, and are of good enough quality for optical waveguide applications.

Epitaxial Growth of Aurivillius Bi3Fe2Mn2Ox Supercell Thin Films on Silicon

“…However, there are challenges with this approach. First, STO has been reported to demonstrate mixed orientation matching on Si, rather than the preferred orientation growth needed for high-quality films. , Second, the etched Si surface could rapidly oxidize under the oxygen atmosphere required to grow high-quality oxides such as STO. To address these challenges, a unique buffer layer stack of TiN/SrTiO 3 /CeO 2 has been proposed to integrate the BFMO SC phase on Si and to effectively mitigate the large mismatch, as shown in Figure a.…”