Preparation of thick stress-free molybdenum films for a resistively heated ion source

Pulsed Laser-Deposited MoS2 Thin Films on W and Si: Field Emission and Photoresponse Studies

“…Hence, it is desirable to explore processes for growth of nearly stoichiometric dense and well adherent films preferably via a dry processing route. PLD is one such technique that can render fairly stoichiometric transfer of atomic species from a bulk target to a thin film under controlled ambient conditions for a diverse classes of systems. − The chemical composition, resultant stoichiometry, and morphology of the PLD film depend on process variables such as laser fluence, deposition temperature, ambient type, gas pressure, etc., which can be tuned/optimized to obtain films of desired quality. − Another unique advantage offered by the PLD process is evolution of the film through surface impingement of highly energetic (0.1–10 eV) ionic and ionized radical species, as against a simple soft landing of atomic species rendered by thermal evaporation. Importantly, this ion bombardment can also assist film texture development under optimized conditions.…”