1996
DOI: 10.1007/bf00753885
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Preparation of (Tl,Bi)(Ba0.4,Sr1.6)Ca2Cu3O9 thick films epitaxially grown on LaAlO3 (100) substrates by a sol-gel process

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Cited by 4 publications
(2 citation statements)
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“…It appears that there are more particles in side b than in side a. Also, we note that there are some submicron holes on the surface, which are also found in other Tl-based thin films [27,30].…”
Section: Resultssupporting
confidence: 70%
See 1 more Smart Citation
“…It appears that there are more particles in side b than in side a. Also, we note that there are some submicron holes on the surface, which are also found in other Tl-based thin films [27,30].…”
Section: Resultssupporting
confidence: 70%
“…In the two-step process, precursor films are deposited on substrates first and then a post-annealing treatment is carried out, with the films being exposed to Tl 2 O vapour at high temperature to form the Tl-2212 phase. The amorphous precursor films used for the post-annealing treatment can be deposited by several techniques such as pulsed laser deposition (PLD), magnetron sputtering, electrochemical deposition, chemical vapour deposition (CVD), metal-organic chemical vapour deposition (MOCVD), spray deposition and the sol-gel method [26][27][28][29][30][31]. The post-annealing treatment can be carried out in a single-or in a two-zone furnace.…”
Section: Introductionmentioning
confidence: 99%