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We have developed a process for the fabrication of (001) oriented SrTiO3 buffer layers onto (001) MgO substrates by rf magnetron sputtering followed by a post-deposition heat treatment in air. Precursor films with Tl :Ba : Ca : Cu ratio 2 : 2 : 2 : 3 were deposited by dc magnetron sputtering onto both these buffered substrates and directly onto (001) SrTiO3 single-crystal substrates, and thalliated at elevated temperatures. Because of Sr diffusion from the substrate/buffer layer, and its subsequent substitution for Ba in the superconducting film, the single Tl–O layer phase Tl(Ba1−xSrx)2Ca2Cu3Oy was stabilized. Diffusion of Ba and Ca in the opposite direction led to the formation of a Ba–Ca–Ti–O compound at the interface. The Tl(Ba1xSrx)2Ca2Cu3Oy films typically have superconducting transition temperatures (Tc's) > 103 K and critical current densities (Jc's) > 2.9 × 105 A cm−2 at 77 K. Rs values measured on these films and scaled to 10 GHz were 3.0 mΩ at 80 K and <200 µΩ at 50 K for the film grown on SrTiO3 buffered MgO, and 2.0 mΩ and 1.0 mΩ at 50 K for the film grown directly onto the (001) SrTiO3 substrate. Films fabricated on (001) SrTiO3 using an in situ deposition technique with a substrate temperature around 100 °C lower than the ex situ thalliation temperature showed no evidence of an interfacial reaction layer.

Epitaxial TlBa2Ca2Cu3O9 high Tc thin films were prepared on LaAlO3 (100) substrates by a combination of laser ablation and thermal evaporation of thallium oxide. X-ray diffraction patterns of θ-2θ scans showed that the films consisted of highly c axis oriented TlBa2Ca2Cu3O9. φ scan measurements revealed an epitaxial growth of the TlBa2Ca2Cu3O9 thin films on the LaAlO3 (100) substrates. Ac inductive measurements indicated the onset of superconductivity at 110 K. At 6 K, the critical current density was 4×106 A/cm2 in zero magnetic field and 6×105 A/cm2 at a magnetic field of 3 T parallel to the c axis.

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