1998
DOI: 10.1016/s0921-4534(98)00210-x
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The transmission electron microscopy investigation and electrical properties of epitaxial Tl-1223 and Bi-substituted Tl-1223 thin films grown by in-situ laser ablation

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Cited by 11 publications
(6 citation statements)
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“…Holstein et al observed a similar chemical interaction between Tl(2212) thin films and SrTiO 3 substrates [115]; however, in a crosssectional TEM study of TBCCO films grown on SrTiO 3 substrates, Morosin et al [116] found no evidence of chemical interaction even though thalliation took place in air at 850 • C. There is thus no current consensus on the reactivity of this interface at high processing temperatures. Less surprisingly, no interaction has been observed between Tl(1223) thin films grown by in situ techniques and SrTiO 3 substrates [91,114] and this is attributed to the lower deposition temperatures (between 650 and 720 • C). The use of low-temperature thalliation anneals also appears to overcome the problem of chemical interaction between TBCCO thin films and SrTiO 3 substrates [117].…”
Section: Strontium Titanatementioning
confidence: 92%
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“…Holstein et al observed a similar chemical interaction between Tl(2212) thin films and SrTiO 3 substrates [115]; however, in a crosssectional TEM study of TBCCO films grown on SrTiO 3 substrates, Morosin et al [116] found no evidence of chemical interaction even though thalliation took place in air at 850 • C. There is thus no current consensus on the reactivity of this interface at high processing temperatures. Less surprisingly, no interaction has been observed between Tl(1223) thin films grown by in situ techniques and SrTiO 3 substrates [91,114] and this is attributed to the lower deposition temperatures (between 650 and 720 • C). The use of low-temperature thalliation anneals also appears to overcome the problem of chemical interaction between TBCCO thin films and SrTiO 3 substrates [117].…”
Section: Strontium Titanatementioning
confidence: 92%
“…This procedure has been used to grow c-axis-aligned films of Tl(1223) on both LaAlO 3 and SrTiO 3 substrates, with T c values up to 95 K on LaAlO 3 and 105 K on SrTiO 3 . The same method has been used to fabricate Bi-substituted Tl(1223) films with values of T c up to 114 K, J c (77 K) up to 8 × 10 5 A cm −2 and R s (10 GHz, 80 K) values less than 1 m [91]. Transmission electron microscopy (TEM) studies of cross-sections of both types of film [91] have shown that the films grown without Bi contained a very high concentration of defects such as a-axis-oriented grains and stacking faults.…”
Section: In Situ Film Fabrication Processesmentioning
confidence: 99%
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“…A microstructural study has also been made of in-situ Tl-1223 films produced by the Regensburg group [27]. These films, grown on both SrTi03 and LaAl03 substrates, have very smooth, mirror-like surfaces, but carry no detectable supercurrent at 77K.…”
Section: Processing Properties and Microstructurementioning
confidence: 99%