Preparation of Ultrahigh-Density Magnetic Nanowire Arrays beyond 1 Terabit/Inch²on Si Substrate Using Anodic Aluminum Oxide Template

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

“…403 Using similar precursors, 100 nm a-SiC:H films with k values as low as 3.1 that show Cu diffusion barrier performance equivalent to higher k = 5.0 a-SiCN:H have also been demonstrated. 402,404 Matsuda has also shown that similar a-SiC:H films can exhibit increased fracture strength due to increased crack tip plasticity arising from the more ductile -(CH 2 ) x -bonding. 406 The combination of such ductile films with traditional low-k a-SiOC:H ILDs was also found to significantly improve the interfacial toughness of the underlying ILD/DB interface.…”

“…Continued k scaling in Si-O-C-N system.-One interesting method that has been recently described by Shimizu attempts to utilize the incorporation of long Si-(CH 2 ) x -Si networks to achieve both a reduction in k and improvement in diffusion barrier performance for a-SiC:H thin films. [402][403][404][405] Shimizu's results using precursors such as 1,1-divinyl silacyclopentane (DVScP) and 5-silaspiro- [4,4]-nonane (SSN) have shown that a-SiC:H films with a significant improvement in mass density can be achieved for a given dielectric constant relative to a-SiC:H films deposited using traditional tetramethylsilane (4MS) precursors. 403 Using similar precursors, 100 nm a-SiC:H films with k values as low as 3.1 that show Cu diffusion barrier performance equivalent to higher k = 5.0 a-SiCN:H have also been demonstrated.…”

“…[402][403][404][405] Shimizu's results using precursors such as 1,1-divinyl silacyclopentane (DVScP) and 5-silaspiro- [4,4]-nonane (SSN) have shown that a-SiC:H films with a significant improvement in mass density can be achieved for a given dielectric constant relative to a-SiC:H films deposited using traditional tetramethylsilane (4MS) precursors. 403 Using similar precursors, 100 nm a-SiC:H films with k values as low as 3.1 that show Cu diffusion barrier performance equivalent to higher k = 5.0 a-SiCN:H have also been demonstrated. 402,404 Matsuda has also shown that similar a-SiC:H films can exhibit increased fracture strength due to increased crack tip plasticity arising from the more ductile -(CH 2 ) x -bonding.…”

Catalytic Nanotruss Structures Realized by Magnetic Self-Assembly in Pulsed Plasma

“…Solution-based magnetic self-assembly of in situ or ex situ synthesized ferromagnetic nanoparticles is currently a vibrant field, − partially since the resulting nanostructures promise an important or improved application in energy storage, , chemical production, and ultrahigh-density magnetic storage . A drawback with this solution-based approach is the difficulty in keeping the nanoparticles clean from oxides and other impurities and that the interparticle contacts and resulting nanostructures consequently suffer in both stability and electrical conductivity.…”

In-situ magnetization/heating electron holography to study the magnetic ordering in arrays of nickel metallic nanowires

“…High-density arrays of magnetic nanowires (NWs) have attracted significant interest due to their expected technological applications in perpendicular recording media, 1 magnetoelectronic devices, 2 sensors, 3,4 and power devices 5 . Research is being realized to design dense assemblies of nanomagnets where each bit comprises a single magnetic object non-volatile and easy to read/modify, 6 as traditional storage devices have intrinsic limitations around 1 Tbits/in 2 7 .…”