2015
DOI: 10.1149/2.0021506ssl
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Preparation of Ultrathin Germanium on Insulator Films Using a Wet Etching Process

Abstract: We demonstrate a wet etching method to reduce the thickness of thin germanium-on-insulator (GOI) films using a dilute solution (a NH 4 OH:H 2 O 2 :H 2 O 2:1:4000 mixture) at a low temperature (5 • C). The etch rate and thickness uniformity were well controlled. The root mean square roughness after wet etching was less than 0.5 nm and did not degrade compared with the original sample. Finally, back gate junctionless transistors were fabricated using the GOI wafers with 15-nm-thick Ge films, thinned by the devel… Show more

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Cited by 6 publications
(5 citation statements)
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“…A similar approach was shown to be effective for thinning commercial semiconductor-on-insulating substrates to the desired thickness, down to a few nanometers, with minimal harm to mobility and roughness. 47,48 In this paper we prove the validity of this approach for correlated-oxide VO 2 thin films deposited on r-cut sapphire. We show that above a critical thickness (around 60 nm for our deposition conditions) the film is characterized by high-quality electronic MIT and unstrained structural properties, which coincides with the appearance of a disordered layer, ∼1−2 nm thick, at the interface between the sapphire and VO 2 most likely responsible for the relaxation.…”
Section: Introductionmentioning
confidence: 61%
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“…A similar approach was shown to be effective for thinning commercial semiconductor-on-insulating substrates to the desired thickness, down to a few nanometers, with minimal harm to mobility and roughness. 47,48 In this paper we prove the validity of this approach for correlated-oxide VO 2 thin films deposited on r-cut sapphire. We show that above a critical thickness (around 60 nm for our deposition conditions) the film is characterized by high-quality electronic MIT and unstrained structural properties, which coincides with the appearance of a disordered layer, ∼1−2 nm thick, at the interface between the sapphire and VO 2 most likely responsible for the relaxation.…”
Section: Introductionmentioning
confidence: 61%
“…So, it could be possible to modify the film thickness postdeposition by thinning a thick film after cooling. A similar approach was shown to be effective for thinning commercial semiconductor-on-insulating substrates to the desired thickness, down to a few nanometers, with minimal harm to mobility and roughness. , …”
Section: Introductionmentioning
confidence: 99%
“…H 2 O 2 is a typical oxidation agent used in MACE of Si [32,33]. Ge, which is more reactive than Si, is etched by H 2 O 2 even in the absence of a metal catalyst [34][35][36][37][38][39][40]. A metal catalyst, nevertheless, can significantly enhance the etch rate, resulting in MACE or i-MACE.…”
Section: Introductionmentioning
confidence: 99%
“…The commercially available P-type B-doped GOI wafers with (100) orientation were used with the doping concentration of ∼10 18 cm −3 . First, the Ge films were thinned to two different thicknesses of 10 nm and 20 nm by the wet etching method as reported in our previous work (7). Then, the active area with width of 5 μm was defined using OL and reactive ion etching (RIE) processes, which was shown as the first part in Fig.…”
Section: Introductionmentioning
confidence: 99%
“…The original thickness of the Ge film was about 50 nm. We reduced d Ge down to 10 nm using a simple wet etching method(7). Fig.3(b) shows a cross-sectional TEM image along the source/drain direction of a GOI-based JNT with gate length L=70 nm, and d Ge =20 nm.…”
mentioning
confidence: 99%