Epitaxial cerium oxide (CeO 2 ; thickness: 40 nm) buffer layers were deposited on large area (maximum size 10 30 cm 2 ) R-cut single-crystal sapphire ( Al 2 O 3 ) substrates by double electron-beam guns. Substrate heater-and-holder system was modified to maintain the substrate temperature uniform over the large area during deposition. Oxygen gas of a pressure 4 10 2 Pa was introduced to keep radio frequency plasma. When the substrate temperature was controlled in the range 640 -700 C, the CeO 2 buffer showed a complete (001) orientation and very smooth surfaces by x-ray diffraction analysis and atomic force microscopic observations, respectively, in the whole area of the large size substrates. These buffer layers without post-deposition annealing were quite suitable for preparing YBa 2 Cu 3 O 7 (YBCO) films by a metal-organic deposition (MOD) using a metal acetylacetonate-based solution. The average critical current density of the 210-nm-thick MOD-YBCO film was in excess of 2.6 MA cm 2 measured by an inductive method at
K.Index Terms-CeO 2 buffer, high-temperature superconductors, MOD process, YBa 2 Cu 3 O 7 .