To clarify the origin of the polarization
of magnesium deposition/dissolution
reactions, we combined electrochemical measurement, operando soft X-ray absorption spectroscopy (operando SXAS),
Raman, and density functional theory (DFT) techniques to three different
electrolytes: magnesium bis(trifluoromethanesulfonyl)amide (Mg(TFSA)2)/triglyme, magnesium borohydride (Mg(BH4)2)/tetrahydrofuran (THF), and Mg(TFSA)2/2-methyltetrahydrofuran
(2-MeTHF). Cyclic voltammetry revealed that magnesium deposition/dissolution
reactions occur in Mg(TFSA)2/triglyme and Mg(BH4)2/THF, while the reactions do not occur in Mg(TFSA)2/2-MeTHF. Raman spectroscopy shows that the [TFSA]− in the Mg(TFSA)2/triglyme electrolyte largely does not
coordinate to the magnesium ions, while all of the [TFSA]− in Mg(TFSA)2/2-MeTHF and [BH4]− in Mg(BH4)2/THF coordinate to the magnesium
ions. In operando SXAS measurements, the intermediate,
such as the Mg+ ion, was not observed at potentials above
the magnesium deposition potential, and the local structure distortion
around the magnesium ions increases in all of the electrolytes at
the magnesium electrode|electrolyte interface during the cathodic
polarization. Our DFT calculation and X-ray photoelectron spectroscopy
results indicate that the [TFSA]−, strongly bound
to the magnesium ion in the Mg(TFSA)2/2-MeTHF electrolyte,
undergoes reduction decomposition easily, instead of deposition of
magnesium metal, which makes the electrolyte inactive electrochemically.
In the Mg(BH4)2/THF electrolyte, because the
[BH4]− coordinated to the magnesium ions
is stable even under the potential of the magnesium deposition, the
magnesium deposition is not inhibited by the decomposition of [BH4]−. Conversely, because [TFSA]− is weakly bound to the magnesium ion in Mg(TFSA)2/triglyme,
the reduction decomposition occurs relatively slowly, which allows
the magnesium deposition in the electrolyte.
Fluoride ion batteries (FIBs) are regarded as promising energy storage devices, and it is important and urgent to develop cathode materials with high energy densities for use in FIBs.
The Z-scheme CO2 reduction activity of metal complex–semiconductor
hybrid photocatalysts was investigated in detail with a focus on the
interfacial electron transfer process. Semiconductors of GaN:ZnO solid
solutions, TaON, and Ta/N-codoped TiO2 were examined as
components of the hybrid photocatalyst in combination with a binuclear
Ru(II) complex. The (photo)physical properties of the semiconductor
part were found to strongly affect the efficiency of interfacial electron
transfer from/to the Ru complex photosensitizer unit, which was attached
to the semiconductor surface. The photocatalytic activity of the hybrids
showed a reasonable relationship with the efficiencies of forward
and backward electron transfer. Among the three semiconductors, the
highest activity was obtained with GaN:ZnO, which had the most negative
conduction band potential among the semiconductors examined. The experimental
results clearly demonstrated that analyses of the emission quenching
process of the excited photosensitizer moiety of the binuclear Ru(II)
complex allowed visualization of the interfacial electron transfer
between the semiconductor and the Ru complex, giving us a rational
guideline to improve the efficiency of the hybrid photocatalyst for
Z-scheme CO2 reduction.
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