Preparation of ZnO-doped Al films by spray pyrolysis technique

Kaid, M’hamed; Ashour, A.

doi:10.1016/j.apsusc.2006.06.045

Cited by 139 publications

(40 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The obtained results show that the refractive index is slightly greater than the refractive index of bulk ZnO (2.0) and then become nearly constant with increasing wavelength (Kaid and Ashour 2007). The similar increment in the refractive index is observed for Erdoped ZnO thin films (Miao et al 2013).…”

Section: Optical Propertiessupporting

confidence: 68%

“…For a doping concentration of 4 at.% of Al, the film exhibits a uniform distribution of spherical grains with compact microstructure. As the Al content further increases up to 6 at.%, the film clearly evidences the absence of close packed morphology and exhibits a porous nature, which is useful for photovoltaic applications (Kaid and Ashour 2007). At much higher doping concentration (8 at.%), the segregation of grains takes place and this is due to the excess of Al content.…”

Section: Resultsmentioning

confidence: 97%

See 1 more Smart Citation

Characterization and study of antibacterial activity of spray pyrolysed ZnO:Al thin films

et al. 2015

View full text Add to dashboard Cite

Aluminum-doped zinc oxide (ZnO:Al) thin films were deposited onto glass substrates using spray pyrolysis technique with the substrate temperature of 400°C. X-ray diffraction analysis indicated that the films were polycrystalline with hexagonal wurtzite structure preferentially oriented along (002) direction. Surface morphology of the films obtained by scanning electron microscopy showed that the grains were of nanoscale size with porous nature for 6 at.% of Al. Atomic force microscopy observations revealed that the particles size and surface roughness of the films decreased with Al-doping. Optical measurements indicated that ZnO:Al (6 at.%) exhibited a band gap of 3.11 eV, which is lower than that of pure ZnO film, i.e. 3.42 eV. Photoluminescence analysis showed weak NBE emission at 396 nm for Al-doped films. The low resistivity, high hall mobility and carrier concentration values were obtained at a doping ratio of 6 at.% of Al. The effective incorporation of 6 at.% of Al into ZnO lattice by occupying Zn sites yielded a well-pronounced antibacterial activity against Staphylococcus aureus.

show abstract

Section: Optical Propertiessupporting

confidence: 68%

Section: Resultsmentioning

confidence: 97%

Characterization and study of antibacterial activity of spray pyrolysed ZnO:Al thin films

et al. 2015

View full text Add to dashboard Cite

show abstract

“…The extinction coefficient increases with energy, in addition, it has an inverse dependence with E in the low energy range. The Transmittance (T) is given by [8] …”

Section: Log( )mentioning

confidence: 99%

Growth and characterization of 4‐Aminopyridinium‐4‐nitro phenolate single crystals

Babu¹,

Thirupugalmani²,

Ramasamy³

2009

Cryst. Res. Technol.

View full text Add to dashboard Cite

Key words growth from solutions, optical properties, X-ray diffraction. PACS 81.10. Dn, 95.85.Nv Organic optical material 4-Aminopyridinium-4-nitro phenolate (4AP4NP) has been synthesized, and single crystals of size 20 x 14 x 6 mm 3 have been grown from acetone solvent at room temperature by solvent evaporation technique. The grown crystals have been characterized by X-ray diffraction to determine the cell parameters, and by FT-IR technique to confirm the formation of the expected compound. The crystal belongs to monoclinic crystal system with space group P2 1 /a.The structural perfection of the grown crystals has been analyzed by high-resolution X-ray diffraction (HRXRD) rocking curve measurements. The thermal stability of the compound has been determined by TG-DTA curves. The transmittance of 4AP4NP has been used to determine the refractive index n; the extinction coefficient K and both the real ε r and imaginary ε i components of the dielectric constant as functions of photon energy. The optical band gap of 4AP4NP is 2.4 eV. The dielectric and mechanical behavior of the specimen was also studied.

show abstract

“…The manufacture of the ZnO nanostructures by treating with hydrogen gas or hydrogen-containing gas has been reported [11][12][13][14]. However, the characteristics of the ZnO films with hydrogen treatment are still unclear.…”

Section: Introductionmentioning

confidence: 99%

The Influence of Hydrogen Gas Treatment on the Characteristics of ZnO Films

Chen¹,

Tien

2009

TOCRYJ

View full text Add to dashboard Cite

This study presents a zinc oxide (ZnO) film deposited on a glass substrate by ultrasonic spraying pyrolysis. The ZnO nanostructure was formed by treating the as-deposited ZnO films with hydrogen. The root-mean-square (RMS) roughness increases from 5.83 nm to 12.53 nm during the treatment for 20 min, but slightly decreases to 11.87 nm at a treatment time of 30 min. In the range 400-500 nm, the transparency of all the films with hydrogen treatment is slightly lower than that of the untreated films. The slight drop in the transparency of the films with hydrogen treatment is caused by scattering from pin-holes or nanostructures on the surface.

show abstract

Preparation of ZnO-doped Al films by spray pyrolysis technique

Cited by 139 publications

References 34 publications

Characterization and study of antibacterial activity of spray pyrolysed ZnO:Al thin films

Characterization and study of antibacterial activity of spray pyrolysed ZnO:Al thin films

Growth and characterization of 4‐Aminopyridinium‐4‐nitro phenolate single crystals

The Influence of Hydrogen Gas Treatment on the Characteristics of ZnO Films

Contact Info

Product

Resources

About