Preparation of ZnO thin films using undulator and ArF excimer laser

Strong Room-Temperature UV Luminescence from ZnO Grown by Metal Organic Decomposition

“…3, the band gap energy of ZnO is found to be 3.23 eV, which is similar to the reported band gap of ZnO. [6][7][8][9][10][11][12] The CL spectrum at room temperature under excitation by a 15 kV electron beam from the ZnO film, is shown in Fig. 4, which exhibits a strong UV emission band at 3.2 eV.…”

“…The deep-level emission was found to be weak in epitaxial films but almost dominated in polycrystalline ZnO films. [6][7][8][9][10][11][12][15][16][17] The fact that we observe a strong near-band-edge emission in the UV region without any deep-level emissions at room temperature from our sample as shown in Fig. 4 indicates MOD is a promising growth method for obtaining high-quality ZnO films.…”

“…[1][2][3][4][5] Recently, ZnO has attracted tremendous attention for applications in blue and UV light-emitting diodes, which can be an alternative to those based on III-nitride due to its large exciton binding energy and abundant mineral sources of Zn. So far, various growth techniques, such as molecular beam epitaxy, 6,7) magnetron sputtering, 8) metal organic chemical vapor deposition, 9,10) and pulsed laser deposition, 11,12) have been explored in order to obtain ZnO films. However, these techniques require large, complex, and expensive equipment, which makes the cost of preparing films relatively high.…”