Preparation, properties and applications of two-dimensional superlattices

Xing, Fei; Ji, Guangmin; Li, Zongwen; Zhong, Weiheng; Wang, Fei‐Yue; Liu, Zhi-Bo; Wei, Xin; Tian, Jianguo

doi:10.1039/d2mh01206e

Cited by 10 publications

(7 citation statements)

References 209 publications

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“…For instance, the moiré superlattices whose properties can be tuned by controlling the interlayer rotation angles are likely to provide a breakthrough in device performance. [27,261,262] On the other hand, the advantages complementarity between different type of LDPPs should also be focused on. As an example mentioned above, the intrinsic advantages of LDMs and related devices can be further amplified with combining their nonlinear photoresponse with local field modulations.…”

Section: Comprehensive Performance Enhancementmentioning

confidence: 99%

Low‐Dimensional‐Materials‐Based Photodetectors for Next‐Generation Polarized Detection and Imaging

Xin,

Zhong,

Shi

et al. 2023

Advanced Materials

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The vector characteristics of light and the vectorial transformations during its transmission lay a foundation for polarized photodetection of objects, which broadens the applications of related detectors in complex environments. With the breakthrough of low‐dimensional materials (LDMs) in optics and electronics over the past few years, the combination of these novel LDMs and traditional working modes is expected to bring new development opportunities in this field. Here, we mainly focus on the state‐of‐the‐art progress of LDMs as polarization‐sensitive components in polarized photodetection and even the imaging, with emphasis on the relationship between traditional working principle of polarized photodetectors (PPs) and photoresponse mechanisms of LDMs. Particularly, from the view of constitutive equation, the existing works are reorganized, reclassified and reviewed. The perspectives on the opportunities and challenges are also discussed. We hope that this work can provide a more general overview in the use of LDMs in this field, sorting out the way of related devices for “more than Moore” or even the “beyond Moore” research.This article is protected by copyright. All rights reserved

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Section: Comprehensive Performance Enhancementmentioning

confidence: 99%

Low‐Dimensional‐Materials‐Based Photodetectors for Next‐Generation Polarized Detection and Imaging

Xin,

Zhong,

Shi

et al. 2023

Advanced Materials

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“…Semiconductor superlattices (SLs) are semiconductor materials that incorporate a one-dimensional periodic potential with a period larger than the crystal lattice [1] . In these materials, the motion of charge carriers is confined along one of the dimensions, resulting in unique quantum properties and modification of the band structure of the host semiconductors.…”

Section: Introductionmentioning

confidence: 99%

An advanced theoretical approach to study super-multiperiod superlattices: theory vs experiments

Dashkov,

Khakhulin,

Shapran

et al. 2024

J. Semicond.

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A new theoretical method to study super-multiperiod superlattices has been developed. The method combines the precision of the 8-band kp-method with the flexibility of the shooting method and the Monte Carlo approach. This method was applied to examine the finest quality samples of super-multiperiod Al0.3Ga0.7As/GaAs superlattices grown by molecular beam epitaxy. The express photoreflectance spectroscopy method was utilized to validate the proposed theoretical method. For the first time, the accurate theoretical analysis of the energy band diagram of super-multiperiod superlattices with experimental verification has been conducted. The proposed approach highly accurately determines transition peak positions and enables the calculation of the energy band diagram, transition energies, relaxation rates, and gain estimation. It has achieved a remarkably low 5% error compared to the commonly used method, which typically results in a 25% error, and allowed to recover the superlattice parameters. The retrieved intrinsic parameters of the samples aligned with XRD data and growth parameters. The proposed method also accurately predicted the escape of the second energy level for quantum well thicknesses less than 5 nm, as was observed in photoreflectance experiments. The new designs of THz light-emitting devices operating at room temperature were suggested by the developed method.

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“…Semiconductor quantum wells (QWs) and superlattices (SLs) have formed the basis of fabricating many modern electronic and optoelectronic devices, including the light-emitting diodes (LEDs), laser diodes (LDs), field-effect transistors (FETs), etc. [1][2][3][4][5][6][7][8][9][10]. Compared with II-VI and III-V compounds, the epitaxial growth of C-based zinc-blende (zb) IV-IV (XC with X = Si, Ge, Sn) binary materials, alloys and heterostructures (i.e., QWs, SLs, etc.)…”

Section: Introductionmentioning

confidence: 99%

“…of higher thermal conductivity, wider electronic energy bandgaps, and higher mechanical strength have recently stimulated interest among the technologists to design different types of device structures (e.g., meta-photonic heterostructures, holographic displays, lasers, etc.) and for the scientists to evaluate their basic traits [1][2][3][4][5][6][7][8][9][10]. The progress in device engineering has Solids 2023, 4 288 demanded careful selection of the C-based wide-bandgap E g (SiC = 2.42 eV; GeC = 1.52 eV) materials which maintain physical properties both at elevated temperatures and higher radiation levels [2][3][4][5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

“…and for the scientists to evaluate their basic traits [1][2][3][4][5][6][7][8][9][10]. The progress in device engineering has Solids 2023, 4 288 demanded careful selection of the C-based wide-bandgap E g (SiC = 2.42 eV; GeC = 1.52 eV) materials which maintain physical properties both at elevated temperatures and higher radiation levels [2][3][4][5][6][7][8][9]. A major precondition for realizing commercial wide-bandgap heterojunction-based devices requires large-area substrates for the preparation of functional multilayer structures.…”

Section: Introductionmentioning

confidence: 99%

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Evaluating Phonon Characteristics by Varying the Layer and Interfacial Thickness in Novel Carbon-Based Strained-Layer Superlattices

Talwar,

Becla

2023

Solids

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Systematic results of lattice dynamical calculations are reported as a function of m and n for the novel (SiC)m/(GeC)n superlattices (SLs) by exploiting a modified linear-chain model and a realistic rigid-ion model (RIM). A bond polarizability method is employed to simulate the Raman intensity profiles (RIPs) for both the ideal and graded (SiC)10-Δ/(Si0.5Ge0.5C)Δ/(GeC)10-Δ/(Si0.5Ge0.5C)Δ SLs. We have adopted a virtual-crystal approximation for describing the interfacial layer thickness, Δ (≡0, 1, 2, and 3 monolayers (MLs)) by selecting equal proportions of SiC and GeC layers. Systematic variation of Δ has initiated considerable upward (downward) shifts of GeC-(SiC)-like Raman peaks in the optical phonon frequency regions. Our simulated results of RIPs in SiC/GeC SLs are agreed reasonably well with the recent analyses of Raman scattering data on graded short-period GaN/AlN SLs. Maximum changes in the calculated optical phonons (up to ±~47 cm−1) with Δ = 3, are proven effective for causing accidental degeneracies and instigating localization of atomic displacements at the transition regions of the SLs. Strong Δ-dependent enhancement of Raman intensity features in SiC/GeC are considered valuable for validating the interfacial constituents in other technologically important heterostructures. By incorporating RIM, we have also studied the phonon dispersions [ωjSLq→] of (SiC)m/(GeC)n SLs along the growth [001] as well as in-plane [100], [110] directions [i.e., perpendicular to the growth]. In the acoustic mode regions, our results of ωjSLq→ have confirmed the formation of mini-gaps at the zone center and zone edges while providing strong evidences of the anti-crossing and phonon confinements. Besides examining the angular dependence of zone-center optical modes, the results of phonon folding, confinement, and anisotropic behavior in (SiC)m/(GeC)n are compared and contrasted very well with the recent first-principles calculations of (GaN)m/(AlN)n strained layer SLs.

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Preparation, properties and applications of two-dimensional superlattices

Abstract: As a combinational concept of 2D material and superlattice, the two-dimensional superlattice (2DS) has attracted increasing attention recently. The natural advantages of 2D materials in properties, dimension, diversity and compatibility,...

Cited by 10 publications

References 209 publications

Low‐Dimensional‐Materials‐Based Photodetectors for Next‐Generation Polarized Detection and Imaging

Low‐Dimensional‐Materials‐Based Photodetectors for Next‐Generation Polarized Detection and Imaging

An advanced theoretical approach to study super-multiperiod superlattices: theory vs experiments

Evaluating Phonon Characteristics by Varying the Layer and Interfacial Thickness in Novel Carbon-Based Strained-Layer Superlattices

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