1991
DOI: 10.1007/978-1-4684-5967-8_10
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Preparation Techniques for Diamond-Like Carbon

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Cited by 54 publications
(19 citation statements)
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“…The strong increase of N/C at a low content of N 2 in the gas mixture seems to be mainly due to the incorporation of nitrogen species coming from the plasma on the film surface during deposition [26]. Similar results have been reported for material grown in FCVA system [27] and Electron Cyclotron Wave Resonance [28]. The increase of the nitrogen content led to a sudden loss of sp 3 bonding, and consequent formation of fine graphite sp 2 bonded structures embedded in sp 3 matrix, which is to be further discussed later in the XPS analysis of the a-CN:H films.…”
Section: Resultssupporting
confidence: 58%
“…The strong increase of N/C at a low content of N 2 in the gas mixture seems to be mainly due to the incorporation of nitrogen species coming from the plasma on the film surface during deposition [26]. Similar results have been reported for material grown in FCVA system [27] and Electron Cyclotron Wave Resonance [28]. The increase of the nitrogen content led to a sudden loss of sp 3 bonding, and consequent formation of fine graphite sp 2 bonded structures embedded in sp 3 matrix, which is to be further discussed later in the XPS analysis of the a-CN:H films.…”
Section: Resultssupporting
confidence: 58%
“…The combined influence of these two parameters was reflected by the value of the selfbias potential, V bias which is the dc potential developed on the target during plasma ignition ͑see Table I͒. 33,36 …”
Section: Resultsmentioning
confidence: 99%
“…Films of a-C:H are commonly produced via plasma deposition techniques at growth rates between 0.1 and 1 nm/s. 3 For practical technological applications, production costs must be minimized. This implies that the growth rate should be increased, while maintaining good film quality.…”
Section: ͓S0003-6951͑96͒02228-0͔mentioning
confidence: 99%