Preparation Techniques for Transmission Electron Microscopy

Barná, R.; Pcz, Bla

doi:10.1002/9783527620753.ch18

Cited by 19 publications

(11 citation statements)

References 92 publications

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“…The cross-sectional TEM specimens were prepared by mechanical polishing and Ar ion-milling. Special Ti supporting discs 12 were used to embed the samples and protect them from heat load during thinning. In order to verify the composition of samples, analytical measurements were made using a Ge detector (NORAN Energy Dispersive Spectrometer system) attached to the CM-20 microscope.…”

Section: Methodsmentioning

confidence: 99%

Electron scattering mechanisms in Cu-Mn films for interconnect applications

Misják

Nagy

Lobotka

et al. 2014

Journal of Applied Physics

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Electrical properties and corresponding structural features of Cu-Mn alloy films with potential application as barrier and interconnect layers were studied. Cu-Mn films were deposited by DC magnetron sputtering at room temperature on SiO2 substrates. Electrical resistivity measurements were made as a function of film composition and temperature. The specific resistivity varies linearly with the Mn content showing a maximum of 205 μΩcm at 80 at. % Mn. The temperature coefficient of resistance (TCR) of all alloy films is low, showing non-metallic conductivity for most compositions. Also a minimum TCR has been observed in the 40–80 at. % Mn range which was attributed to a magnetic transformation around 200–300 K. Electrical resistivity measurements are correlated with the film structure revealed by transmission electron microscopy to clarify the phase regions throughout the composition range. In the 20–40 at. % and 70–80 at. % Mn ranges, two-phase structures were identified, where Cu- or Mn-rich solid solution grains were surrounded by a thin amorphous covering layer. Based on the revealed phase regions and morphologies electron scattering mechanisms in the system were evaluated by combining the Matthiessen's rule and the Mayadas-Schatzkes theory. Grain boundary reflectivity coefficients (r = 0.6–0.8) were calculated from fitting the model to the measurements. The proposed model indicates that, in a binary system, the special arrangement of the two phases results in new scattering mechanisms. The results are of value in optimizing the various parameters needed to produce a suitable barrier layer.

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Section: Methodsmentioning

confidence: 99%

Electron scattering mechanisms in Cu-Mn films for interconnect applications

Misják

Nagy

Lobotka

et al. 2014

Journal of Applied Physics

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“…The studies were performed in Philips CM 20 transmission electron microscope (TEM) operated at 200 kV. For this study, special transparent samples were prepared by mechanical thinning, dimpling and ion milling [17]. Simultaneously, chemical composition mapping of samples by energy dispersive X-ray spectrometry (EDX) was carried out by means of NORAN Voyager system, attached to the Philips CM 20 TEM.…”

Section: Methodsmentioning

confidence: 99%

“…However, because of an unintentional sample heating during cross-sectional specimen preparation [17], a starting Pd-Ge interdiffusion and, as a consequence, a ''metal-induced crystallization" of the Ge layer could be observed (Fig. 2a).…”

Section: Metallurgical Propertiesmentioning

confidence: 99%

Related Electrical and Metallurgical Properties of Pd/Zn/Pd/Ge and Pd/Zn/Pd/Au Contact Systems to p-InGaP

Malina

Vogel

Ressel

et al. 2001

phys. stat. sol. (a)

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The comparison of electrical and metallurgical properties of vacuum-evaporated Ge/Pd(Zn) and Au/Pd(Zn) contact metallizations to moderately doped p-type InGaP epitaxial layers (p % 2 Â 10 18 cm --3 ) is presented. The Pd/Zn/Pd/Ge contacts exhibited Ohmic behaviour already from 400 C and their specific contact resistance dropped to 4 Â 10 --5 W cm 2 when annealed at 490 C. Cross-sectional transmission electron microscopy and energy dispersive X-ray spectrometry demonstrated that a relatively sharp and nonspiking contact-InGaP interface has still been preserved at this high temperature. On the other hand, regardless of the excellent electrical properties (r c = 5 Â 10 --6 W cm 2 at 490 C) of the Pd/Zn/Pd/Au contacts, strong metallurgical reactions at the contact-InGaP interface at temperatures ! 450 C resulted in an extensive decomposition and melting of the interface area with deep protrusions into the InGaP.

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“…The samples for XTEM studies were prepared by applying the conventional procedure; embedding and mechanical polishing followed by Ar + -ion milling [16]. We used an additional "two-in-one" technique [17] so that pairs of samples were thinned in single specimens, simultaneously.…”

Section: Samplesmentioning

confidence: 99%