Preparing porous diamond composites via electrophoretic deposition of diamond particles on foam nickel substrate

Wang, Yanhui; Liang, Yaqing; Cheng, Xiaozhe; Huang, Hao; Zang, Jianbing; Lu, Jing; Yu, Yiqing; Xu, Xipeng

doi:10.1016/j.matlet.2014.09.087

Cited by 9 publications

(1 citation statement)

References 18 publications

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“…However, GaN-based devices suffer from the same TBR issue. Despite the introduction of various substrates such as silicon carbide, silicon, diamond composite substrates, , and diverse heat management strategies such as flip-chip bonding, the nonuniform heat dissipation across the GaN–substrate interface leads to channel disintegration, device breakdown, and poor device reliability. , Although replacing silicon carbide (with low thermal conductivity, ∼450 W m –1 K –1 ) by chemical vapor deposited polycrystalline diamond (with thermal conductivity ∼1000 W m –1 K –1 ) partially solves the thermal transport problems, , the acoustic mismatch between materials, , the dielectric layer used for diamond growth seeding, , and the defective transition (nucleation) region , generate a significant barrier (50 m 2 K GW –1 ) for phonon transport.…”

Section: Introductionmentioning

confidence: 99%

Interlaced, Nanostructured Interface with Graphene Buffer Layer Reduces Thermal Boundary Resistance in Nano/Microelectronic Systems

Tao

Sreeprasad

Shahsavari

2016

ACS Appl. Mater. Interfaces

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Improving heat transfer in hybrid nano/microelectronic systems is a challenge, mainly due to the high thermal boundary resistance (TBR) across the interface. Herein, we focus on gallium nitride (GaN)/diamond interface-as a model system with various high power, high temperature, and optoelectronic applications-and perform extensive reverse nonequilibrium molecular dynamics simulations, decoding the interplay between the pillar length, size, shape, hierarchy, density, arrangement, system size, and the interfacial heat transfer mechanisms to substantially reduce TBR in GaN-on-diamond devices. We found that changing the conventional planar interface to nanoengineered, interlaced architecture with optimal geometry results in >80% reduction in TBR. Moreover, introduction of conformal graphene buffer layer further reduces the TBR by ∼33%. Our findings demonstrate that the enhanced generation of intermediate frequency phonons activates the dominant group velocities, resulting in reduced TBR. This work has important implications on experimental studies, opening up a new space for engineering hybrid nano/microelectronics.

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