Pressure and Temperature Dependence of Threshold Current in Semiconductor Lasers Based on InGaAs/GaAs Quantum-Well Systems

Maziarz, Michał; Piechal, Bernard; Bercha, Artem; Bohdan, R.; Trzeciakowski, Witold; Majewski, J. A.

doi:10.12693/aphyspola.112.437

Cited by 7 publications

(2 citation statements)

References 5 publications

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“…In 980 nm InGaAs/GaAs lasers (where the threshold current is dominated by radiative transitions) it has been shown [12] that the radiative current is approximately proportional to kT . Pressure measurements of 980 nm lasers revealed [12] a very small variation of threshold current with pressure. Therefore in the present paper we assume a linear kT dependence of I rad and we assume that it does not change with pressure.…”

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confidence: 99%

Wide Range Wavelength Tuning of InGaAsP/InP Laser Diodes

2011

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We present results of theoretical studies of external tuning for laser diodes based on InGaAsP/InP heterostructures at temperatures from 300 K down to 80 K and at hydrostatic pressures up to 2.27 GPa. The tuning range achieved by pressure and grating was 390 nm (from 1220 nm to 1610 nm). At lower temperatures the tuning range achieved with grating was significantly reduced. Our results indicate that pressure tuning is much more effective than temperature tuning when combined with tuning by external grating.

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Section: Tablementioning

confidence: 99%

Wide Range Wavelength Tuning of InGaAsP/InP Laser Diodes

2011

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“…However, it is important to determine how the width (and shape) of the gain curve changes with pressure or with temperature, which has been the purpose of the present paper. Our considerations have been exemplified for the typical 980 nm InGaAs/GaAs quantum-well (QW) laser, for which we previously calculated the threshold currents as a function of pressure and temperature [5]. Pressure and temperature have been widely used for the characterization of LDs [6-9], allowing to identify different recombination…”

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Pressure and temperature dependence of gain in InGaAs/GaAs laser diode

Bajda

Piechal

Dybała

et al. 2011

Physica Status Solidi (b)

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Wavelength dependent gain has been calculated for InGaAs/ GaAs quantum-well (QW) lasers as a function of hydrostatic pressure and temperature. The shift of the gain maximum for such laser is equal to À140 nm by increasing the pressure up to 20 kbar and À60 nm by cooling down from 300 to 100 K. The width of the gain curve (determining the possible tuning range with external grating) is significantly reduced at low temperatures and (to a lower extent) at high pressures. Our results indicate that pressure tuning is much more effective than temperature tuning when combined with tuning by external grating.1 Introduction Laser diodes (LDs) can be wavelength tuned in the external resonator [1,2] by forcing the laser to oscillate at a frequency determined by some external reflector (diffraction grating, fiber Bragg reflector, etc.) The available tuning range is determined by the width of the positive net gain. The other possible tuning method consists in shifting the whole gain curve by external parameters like pressure or temperature. These methods can be combined, i.e., pressure/temperature tuning can be performed for the external cavity laser tuned by the grating [3,4]. This allows for very wide tuning range with single-mode operation and good beam quality. It turns out that the laser tuning by pressure/temperature may increase the range obtained by the grating. However, it is important to determine how the width (and shape) of the gain curve changes with pressure or with temperature, which has been the purpose of the present paper. Our considerations have been exemplified for the typical 980 nm InGaAs/GaAs quantum-well (QW) laser, for which we previously calculated the threshold currents as a function of pressure and temperature [5]. Pressure and temperature have been widely used for the characterization of LDs [6-9], allowing to identify different recombination

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3D Atomic‐Scale Insights into Anisotropic Core–Shell‐Structured InGaAs Nanowires Grown by Metal–Organic Chemical Vapor Deposition

Burgess

et al. 2017

Advanced Materials

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III-V ternary InGaAs nanowires have great potential for electronic and optoelectronic device applications; however, the 3D structure and chemistry at the atomic-scale inside the nanowires remain unclear, which hinders tailoring the nanowires for specific applications. Here, atom probe tomography is used in conjunction with a first-principles simulation to investigate the 3D structure and chemistry of InGaAs nanowires, and reveals i) the nanowires form a spontaneous core-shell structure with a Ga-enriched core and an In-enriched shell, due to different growth mechanisms in the axial and lateral directions; ii) the shape of the core evolves from hexagon into Reuleaux triangle and grows larger, which results from In outward and Ga inward interdiffusion occurring at the core-shell interface; and iii) the irregular hexagonal shell manifests an anisotropic growth rate on {112}A and {112}B facets. Accordingly, a model in terms of the core-shell shape and chemistry evolution is proposed, which provides fresh insights into the growth of these nanowires.

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Pressure and Temperature Dependence of Threshold Current in Semiconductor Lasers Based on InGaAs/GaAs Quantum-Well Systems

Cited by 7 publications

References 5 publications

Wide Range Wavelength Tuning of InGaAsP/InP Laser Diodes

Wide Range Wavelength Tuning of InGaAsP/InP Laser Diodes

Pressure and temperature dependence of gain in InGaAs/GaAs laser diode

3D Atomic‐Scale Insights into Anisotropic Core–Shell‐Structured InGaAs Nanowires Grown by Metal–Organic Chemical Vapor Deposition

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