Pressure controlled trimerization for switching of anomalous Hall effect in triangular antiferromagnet 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Mn</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mi>Sn</mml:mi></mml:mrow></mml:math>

Singh, Charanpreet; Singh, Vikram; Pradhan, Gyandeep; Srihari, Velaga; Poswal, H. K.; Nath, R.; Nandy, Ashis; Nayak, Ajaya K.

doi:10.1103/physrevresearch.2.043366

Cited by 14 publications

(10 citation statements)

References 44 publications

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“…In addition, many experimental observations of high pressure modulated AHE have been reported in the other topological materials. [28][29][30][31][32][33][34][35] In this paper, we have tuned the giant AHE in CsV 3 Sb 5 by applying hydrostatic pressure. We confirm that the AHE is strongly correlated with the CDW order even under pressure.…”

Section: Introductionmentioning

confidence: 99%

Pressure tuning of the anomalous Hall effect in the kagome superconductor CsV₃Sb₅

Yu¹,

Wen²,

Gui³

et al. 2022

Chinese Phys. B

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Controlling the anomalous Hall effect (AHE) inspires potential applications of quantum materials in the next generation of electronics. The recently discovered quasi-2D kagome superconductor CsV3Sb5 exhibits large AHE accompanying with the charge-density-wave (CDW) order which provides us an ideal platform to study the interplay among nontrivial band topology, CDW, and unconventional superconductivity. Here, we systematically investigated the pressure effect of the AHE in CsV3Sb5. Our high-pressure transport measurements confirm the concurrence of AHE and CDW in the compressed CsV3Sb5. Remarkably, distinct from the negative AHE at ambient pressure, a positive anomalous Hall resistivity sets in below 35 K with pressure around 0.75 GPa, which can be attributed to the Fermi surface reconstruction and/or Fermi energy shift in the new CDW phase under pressure. Our work indicates that the anomalous Hall effect in CsV3Sb5 is tunable and highly related to the band structure.

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Section: Introductionmentioning

confidence: 99%

Pressure tuning of the anomalous Hall effect in the kagome superconductor CsV₃Sb₅

Yu¹,

Wen²,

Gui³

et al. 2022

Chinese Phys. B

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“…According to ref. 52, the V at 50 K is 124.64 Å 3 . We define 124.64 Å 3 and the corresponding Δ E AFM–FM −436 meV f.u.…”

Section: Resultsmentioning

confidence: 91%

“…Isostatic pressure is beneficial for stabilizing helical AFM. 51,52 Applying uniaxial stress along the c-crystal axis suppresses the helical AFM phase transition 49 and changes Mn 3 Sn from a coplanar non-collinear AFM configuration to a non-coplanar AFM configuration. 37,53 Second, if we check the given diffraction peaks, some obvious differences with various s can be observed.…”

Section: Resultsmentioning

confidence: 99%

Zero-field-cooling exchange bias up to room temperature in the strained kagome antiferromagnet Mn_3.1Sn_0.9

Zhao¹,

Guo²,

Wu³

et al. 2023

Mater. Horiz.

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“…The core of such a tactic lies in the effective tuning of the competition between magnetoelastic energy and other magnetic anisotropy energy. Electric-field manipulation of noncollinear antiferromagnets has been demonstrated in Mn 3 X [55][56][57]89,90] and Mn 3 AN. [91][92][93] Nevertheless, even though one takes no account of the energy cost, the switching timescales of the above two methods are limited to ~100 ps as they both rely on electric circuits.…”

mentioning

confidence: 99%

“…[108] Possible routes include improving sample quality and enhancing SOT efficiency. In addition, the AHE can also be effectively tuned or optimized by strain (pressure) [32,[55][56][57]89,[91][92][93]109,110] or chemical potential. [111] One the other hand, a typical AMR ratio for an antiferromagnetic metal is only ~0.1% at room temperature, [5,112] which is far from application and also holds for noncollinear antiferromagnets.…”

mentioning

confidence: 99%

Noncollinear Antiferromagnetic Spintronics

Chen¹,

Qin²,

Yan³

et al. 2022

MatLab

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Antiferromagnetic spintronics is one of the leading candidates for next-generation electronics. Among abundant antiferromagnets, noncollinear antiferromagnets are promising for achieving practical applications due to coexisting ferromagnetic and antiferromagnetic merits. In this perspective, we briefly review the recent progress in the emerging noncollinear antiferromagnetic spintronics from fundamental physics to device applications. Current challenges and future research directions for this field are also discussed.

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Pressure controlled trimerization for switching of anomalous Hall effect in triangular antiferromagnet Mn3Sn

Cited by 14 publications

References 44 publications

Pressure tuning of the anomalous Hall effect in the kagome superconductor CsV₃Sb₅

Pressure tuning of the anomalous Hall effect in the kagome superconductor CsV₃Sb₅

Zero-field-cooling exchange bias up to room temperature in the strained kagome antiferromagnet Mn_3.1Sn_0.9

Noncollinear Antiferromagnetic Spintronics

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Pressure controlled trimerization for switching of anomalous Hall effect in triangular antiferromagnet Mn3Sn

Cited by 14 publications

References 44 publications

Pressure tuning of the anomalous Hall effect in the kagome superconductor CsV3Sb5

Pressure tuning of the anomalous Hall effect in the kagome superconductor CsV3Sb5

Zero-field-cooling exchange bias up to room temperature in the strained kagome antiferromagnet Mn3.1Sn0.9

Noncollinear Antiferromagnetic Spintronics

Contact Info

Product

Resources

About

Pressure tuning of the anomalous Hall effect in the kagome superconductor CsV₃Sb₅

Pressure tuning of the anomalous Hall effect in the kagome superconductor CsV₃Sb₅

Zero-field-cooling exchange bias up to room temperature in the strained kagome antiferromagnet Mn_3.1Sn_0.9