Pressure dependence of Cu, Ag, andFe/n−GaAsSchottky barrier heights

Abstract

The Schottky barrier height of intimate Cu/GaAs ͑110͒, Ag/GaAs ͑110͒, and Fe/GaAs ͑100͒ has been measured as a function of hydrostatic pressure. The pressure dependence of the Cu and Ag/n-GaAs barrier heights of 97Ϯ4 meV/GPa fall within the uncertainty of the pressure dependence of the As Ga defect and track the predicted value of As Ga -rich interfaces. In contrast, the pressure dependence of the Fe/n-GaAs(100) Schottky barrier height of 109Ϯ7 meV/GPa does not fall within experimental error of these values and falls at nearly the predicted dependence of defect-free interfaces.

Influence of interface structure on electronic properties and Schottky barriers inFe∕GaAsmagnetic junctions

“…Our calculations suggest that at the defect-free interface, the Fermi level is pinned by Fe minority-spin interface states, supporting the metal-induced gap states (MIGS) model 32,33 rather than the semiconductor surface state model. 21 This also agrees with recent experiments on the pressure dependence of metal/GaAs Schottky barrier heights, 26 which support the MIGS model for atomically clean Fe/GaAs interfaces. A notable difference between the interface states we find and MIGS suggested in the original works 32,33 is that the interface states in our case are localized at the interface and are not derived from the metal bulk states.…”

Bias-dependent electrical spin generation in Fe3Si/GaAs : Consistent behavior in nonlocal and local spin valves and in the three-terminal configuration

“…[34] [Eqs. (14) and (40) for forward and reverse bias conditions, respectively]. However, for the present case of a heavily doped interlayer, the obtained diode parameters have to be regarded as rough estimates.…”

“…The larger Schottky barrier height of the HT-Fe 3 Si contacts most likely originates from atomic exchange reactions at the FM/SC interface which are promoted by higher growth temperatures, especially for Fe containing FM films [36][37][38]. Selective exchange reactions, in particular, influence the GaAs stoichiometry at the interface proximity and, thus, the density of electronic gap states which are responsible for Fermi level pinning and the Schottky barrier formation [39,40]. Furthermore, the degree of electrical compensation resulting from the incorporation of Fe impurities and the temperature-dependent formation of Fe precipitates in the GaAs lattice might play an important role for the Fermi level pinning and the resulting Schottky barrier height [41][42][43].…”

Electronic structure computation and differential capacitance profile in δ-doped FET as a function of hydrostatic pressure

“…These studies conclude that by the effect of pressure is possible to modify the electronic structure of δ -doped quantum wells. Besides, there are experimental reports and an analytical expression that takes into account the effect of hydrostatic pressure on the height of the Schottky barrier [7,8,9]. These two elements, δ -doped well and Schottky barrier, are the building blocks of δ -doped Field Effect Transistors.…”