The Schottky barrier height of intimate Cu/GaAs ͑110͒, Ag/GaAs ͑110͒, and Fe/GaAs ͑100͒ has been measured as a function of hydrostatic pressure. The pressure dependence of the Cu and Ag/n-GaAs barrier heights of 97Ϯ4 meV/GPa fall within the uncertainty of the pressure dependence of the As Ga defect and track the predicted value of As Ga -rich interfaces. In contrast, the pressure dependence of the Fe/n-GaAs(100) Schottky barrier height of 109Ϯ7 meV/GPa does not fall within experimental error of these values and falls at nearly the predicted dependence of defect-free interfaces.