Pressure dependence of the deep level associated with oxygen in <i>n</i>-GaAs

Zylbersztejn, Adam; Wallis, R.H.; Besson, J. M.

doi:10.1063/1.89887

Cited by 33 publications

(12 citation statements)

References 9 publications

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“…For all the temperatures the slopes of these lines were found to be equal to 40 ± 3 meV/GPa. This value appears to be in good agreement with the data reported for EL2 [8,9]. Some intriguing facts follow from our experimental data.…”

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confidence: 82%

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Hydrostatic-Pressure Deep Level Transient Spectroscopy Study of the Heteroantisite Antimony Level in GaAs

et al. 1992

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We present some preliminary results of the first hydrostatic-pressure study of the electronic level related to the Sb-heteroantisite defect in GaAs. We studied two kinds of n-type GaAs samples doped with antimony: bulk samples grown by liquid encapsulated Czochralski method and thin layers grown by metalorganic chemical vapour deposition technique. We found strongly nonlinear pressure dependence of the activation energy of the emission rate for the level. Moreover, the results obtained for the bulk material were fairly different from those obtained for thin metalorganic chemical vapour deposition layers. The possible explanation of this difference is presented.PACS numbers: 71.55.Eq, 62.50.-p Antisite-type defects are very important and interesting point defects in III-V semiconductors. The best known defect of such a type is EL2 in GaAs. Recently some works on antimony heteroantisite defect in GaAs have been published [1][2][3][4][5][6]. It has been shown that such a defect has a donor level about 0.5 eV below the conduction band edge of GaAs. We performed the first measurements of the hydrostatic pressure dependence of the SbG a (0/+) level activation energy in order to compare it with the pressure coefficient of EL2.

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confidence: 82%

“…The pressure dependence of the activation energy of the Sba(0/+) level, obtained for MOCVD samples at higher pressures is similar to that of EL2 level [8,9]. The dramatical change of the pressure coefficient near 0.3 GPa may be due to the capture cross-section activation-energy dependence.…”

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confidence: 65%

Hydrostatic-Pressure Deep Level Transient Spectroscopy Study of the Heteroantisite Antimony Level in GaAs

et al. 1992

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“…Zylberstztejn et al [4] deduced a coefficient of (3.5 AE 0.3) Â 10 8 meV/Pa for EL-2 in GaAs from similar measurements but only up to a maximum pressure of 5 Â 10 8 Pa. The coefficient of 4 Â 10 8 meV/Pa determined by us is, therefore, more accurate since measurements have been extended to $ 15 Â 10 8 Pa.…”

Section: Analysis and Discussionmentioning

confidence: 53%

“…However, not much information is available about the properties of the EL-2 level in GaAs under pressure. Zylbersztejn et al [4] found that this level (named oxygen) separates from the conduction band at a linear rate of (3.8 AE 0.3) Â 10 8 meV/Pa. Results of Kumagai et al [5] can be reinterpreted to show that it has a pressure coefficient of 3.5 Â 10 8 meV/Pa in BTG grown GaAs, considering a forbidden energy gap pressure coefficient of 12.6 Â 10 8 meV/Pa.…”

Section: Introductionmentioning

confidence: 99%

“…Bastide et al [6] measured the pressure coefficient of this level under uniaxial stress and concluded an equivalent hydrostatic coefficient of (3.0 AE 1.5) Â 10 8 meV/Pa. All these measurements were limited to a maximum pressure of about 5.0 Â 10 8 Pa and no conclusions were drawn regarding the nature of this level except Zybersztejn et al [4] who concluded that most of the variation in level energy comes from the pressure dependent Franck-Condon shift. In the present paper, we report measurements and results of C-V and C-t data on Au-Schottky diodes fabricated on VPE, LPE, MBE and annealed VPE samples.…”

Section: Introductionmentioning

confidence: 99%

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Defect Levels in n-Type Gallium Arsenide and Gallium Aluminum Arsenide Layers

Saxena

2001

phys. stat. sol. (a)

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Capacitance-voltage/time measurements have been made on Au-Schottky barrier diodes to LPE, VPE, bulk, OMVPE-GaAs, GaAlAs and MBE-GaAs/GaAlAs quantum wells to detect and characterize deep levels. LPE-GaAs was-grown by varying the degree of melt under-and super-saturation to study the effect on traps. Cylinder-piston assembly and Bridgman anvil systems were employed to observe the emission of carriers from deep levels up to a pressure of 50 Â 10 8 Pa. The effect of annealing on traps in VPE-GaAs has also been investigated. It has been shown that emission from the 0.83 eV (EL-2) level in GaAs is not dependent on electric field in the range of about 60-125 kV/cm. The energy pressure coefficient of this level in GaAs has been measured as 4.0 Â 10 8 meV/Pa by extending measurements, for the first time, to 15 Â 10 8 Pa. From emission studies at 50 Â 10 8 Pa, it has been shown that the level EL-2 is coupled to the L minima and the G-L energy separation of 0.282 eV accounts for most of the experimental data. The 0.83 eV level has also been found to exist in LPE-GaAs and it has been concluded that Ga vacancy and As Ga antisite defect complex are responsible as the most likely source of its origin. It has been concluded that the absolute position of the level in the band gap remains almost invariant with pressure and that there is no need to assume a pressure dependent Franck-Condon shift. However, for a similar level found in GaAs/GaAlAs MBE quantum wells, the energy pressure coefficient has been measured to be as high as (13.8 AE 0.8) Â 10 8 meV/Pa. In some samples, 0.83 and 0.76 eV electron levels exist together, clearly showing that these are two different levels. The 0.64 eV hole trap level has not only been found in LPE-GaAs, GaAlAs, heat treated VPE but also in 'as-grown' VPE-GaAs. The present results have discounted the pure Ga and As vacancy model for the 0.83 and 0.64 eV levels in VPE and LPE-GaAs, respectively. We attribute the 0.64 eV hole level to a Ga vacancy-Cr complex.

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Optical Properties

Bourgoin

Lannoo

1983

Springer Series in Solid-State Sciences

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Pressure dependence of the deep level associated with oxygen in n-GaAs

Cited by 33 publications

References 9 publications

Hydrostatic-Pressure Deep Level Transient Spectroscopy Study of the Heteroantisite Antimony Level in GaAs

Hydrostatic-Pressure Deep Level Transient Spectroscopy Study of the Heteroantisite Antimony Level in GaAs

Defect Levels in n-Type Gallium Arsenide and Gallium Aluminum Arsenide Layers

Optical Properties

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