Pressure dependence of the electrical resistance of shock-compressed CuNiMn 3-12 manganin and CuNiMn 40-1.5 constantan

Dremin, A. N.; Kanel, G. I.

doi:10.1007/bf00740297

Cited by 4 publications

(1 citation statement)

References 4 publications

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“…Data of such studies have made it possible, in particular, to develop a method for measuring high pressures by piezoresistive elements, including Manganin ones [1], and to determine the transformation pressure in multiple polymorphic transitions [2]. The conductivity of metals with a low specific resistance, such as aluminum, copper, etc., is especially difficult to determine by traditional contact measurement.…”

Section: Introductionmentioning

confidence: 99%

Method for determining the electrical conductivity of nonmagnetic metals under dynamic loading

Гулевич

Пай

Yakovlev

2010

Combust Explos Shock Waves

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Section: Introductionmentioning

confidence: 99%

Method for determining the electrical conductivity of nonmagnetic metals under dynamic loading

Гулевич

Пай

Yakovlev

2010

Combust Explos Shock Waves

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Hysteresis-corrected calibration of manganin under shock loading

Vantine

Erickson

Janzen

1980

Journal of Applied Physics

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The coefficient of electrical resistance of manganin was measured under shock loading and ramp unloading. We made 64 measurements of loading stress in the 1.3–40.5-GPa range and 22 measurements of unloading stress in the 1.9–23.2-GPa range. The average loading coefficient was 14% larger than the average unloading coefficient—a clear measure of resistance hysteresis. The source of the hysteresis is attributed to an irreversible resistance change in manganin caused by shock damage. We present techniques to correct for the effects of this irreversible resistance change. With this correction, both loading and unloading levels showed the same average coefficient of resistance 0.0221±0.004 per GPa. Our unified calibration procedure can be very useful for analyzing complex stress signals that are produced, for example, by reactive shock waves.

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Metallization of silicon in a shock wave: the metallization threshold and ultrahigh defect densities

Гилев¹,

Trubachev²

2004

J. Phys.: Condens. Matter

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Time-resolved electrical conductivity measurements on monocrystalline doped silicon are performed under shock compression up to 23 GPa followed by release. With increasing normal stress, the electrical conductivity of silicon increases monotonically by five orders of magnitude and reaches that of 'poor' metals. The stress dependence of the conductivity comprises two parts: a steep rise and a 'plateau'. The 'plateau' conductivity corresponds to the metallic state of silicon; it does not depend on the compression regime or the doping type or amount of impurity. The onset of the metallic phase corresponds to a shock stress of about 10 GPa; most of the specimen is metallic at 12 GPa. The state of shock-compressed silicon proves to be extremely defective. The defect concentration in shocked silicon exceeds the equilibrium concentration by five orders of magnitude and exceeds the defect concentration in classic metals by an order of magnitude. This indicates distinctive features of brittle solid deformation. Experimentally, the metallic phase proves to be metastable. Releasing stress causes a temporary delay of the reverse transition. List of symbols P x Stress σThe electrical conductivity τThe characteristic time of current relaxation L s L x The shunt inductance and specimen inductance, respectively R s R x The shunt resistance and specimen resistance, respectively V Voltages through the electrodes V 0 Initial voltages through the electrodes

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Pressure dependence of the electrical resistance of shock-compressed CuNiMn 3-12 manganin and CuNiMn 40-1.5 constantan

Cited by 4 publications

References 4 publications

Method for determining the electrical conductivity of nonmagnetic metals under dynamic loading

Method for determining the electrical conductivity of nonmagnetic metals under dynamic loading

Hysteresis-corrected calibration of manganin under shock loading

Metallization of silicon in a shock wave: the metallization threshold and ultrahigh defect densities

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