Pressure dependence of the Raman spectra of indium sulphide

High-pressure electronic structure and phase transitions in monoclinic InSe: X-ray diffraction, Raman spectroscopy, and density functional theory

“…Negative pressure coefficients for several phonon modes have also been previously reported in Raman experiments on InS. 43,44 The pressure evolution of the A g modes can be explained by the progressive weakening of two In-Se intralayer bonds as coordination changes from the 4 + 2 one typical of MC InSe to the nearly octahedral six fold coordination of tetrag- onal InSe ͓see Fig. 8͑b͔͒.…”

Temperature dependence of the Raman-active phonon frequencies in indium sulfide

“…1, in the A g 1 and A g 2 modes the atoms vibrate in the direction of stretching bonds, whereas the A g 3 and A g 4 modes correspond to the bending vibrations of the atoms. It was previously observed that the frequencies of A g 1 and A g 2 modes increase and those of A g 3 and A g 4 modes decrease with pressure [1]. It was reported that the Grüneisen parameters of the first two modes are positive g 1 0:7; g 2 0:2 and those of the last two are negative g 3 Ϫ1:5; g 4 Ϫ0:4.…”

“…A room temperature pressure-induced structural phase transition in InS crystal was predicted on the basis of Raman scattering studies at various hydrostatic pressures up to 1.2 GPa [1]. Six of the nine modes of the Brillouin zone center, observed in the Raman spectra show a decrease in frequency as pressure increases.…”

First‐principles Calculations of InS‐based Nanotubes

“…Nevertheless, the structural properties of the crystal are fairly well established, and the crystal structure of InS can be considered as a three‐dimensional network that is different from a layered structure of its counterparts (GaS, GaSe, InSe). There have been several studies on the optical absorption and electrical conductivity of InS. High pressure Raman and transport measurements were reported by Faradzhev et al .…”

“…There have been several studies on the optical absorption and electrical conductivity of InS. High pressure Raman and transport measurements were reported by Faradzhev et al . and Takarabe et al., respectively.…”