Pressure dependence of the silicon carbide synthesis temperature

Limandri, Silvina P.; Garbarino, Gastón; Sebag, David; Mézouar, M.; Josa, V. Galván

doi:10.1063/1.5085839

Cited by 5 publications

(1 citation statement)

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“…This is attributed to the higher reactivity of amorphous carbon because of its high concentration of dangling bonds [30][31][32]. Also, carbon atoms have higher mobility in amorphous carbon than in graphite [33]. The higher mobility of the carbon atoms increases the diffusion of carbon throughout the reacting mixture -this allows the reactants to come in contact with each other thus leading to synthesis of boron carbide at lower temperatures.…”

Section: Discussion a Search For The Optimal Synthesis Parametersmentioning

confidence: 99%

Synthesis of boron carbide from its elements at high pressures and high temperatures

Chakraborti

Vast

Godec

2020

Solid State Sciences

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The formation of boron carbide under high pressures and from elemental reactants has been studied and optimum parameters have been determined by varying the (P, T, reactants) conditions.To this end, stoichiometric mixtures of commercial β rhombohedral boron and amorphous glassy carbon have been subjected to temperatures ranging from 1473 K to 2473 K at pressures of 2 GPa, 5 GPa and 13 GPa. Similar syntheses have been repeated for mixtures of β boron and graphite, and amorphous boron and amorphous carbon at 2 GPa and 5 GPa. The carbon concentration of boron carbide is shown to be affected by pressure at which it is synthesised from elements, and we propose pressure as a means to control the carbon content. The formation temperature is shown to be affected by the pressure and the choice of the reactants. The effect of temperature cycling on the formation temperature has also been studied. The formation of α boron as an intermediate phase is seen at 5 GPa before the formation of boron carbide.

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Section: Discussion a Search For The Optimal Synthesis Parametersmentioning

confidence: 99%