2019
DOI: 10.1039/c8ra09441a
|View full text |Cite
|
Sign up to set email alerts
|

Pressure-induced metallization in MoSe2 under different pressure conditions

Abstract: Our experimental results clearly indicate that the metallization behavior of MoSe2 exhibits significant dependence on the pressure environments.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

3
57
0

Year Published

2019
2019
2024
2024

Publication Types

Select...
6
1

Relationship

1
6

Authors

Journals

citations
Cited by 36 publications
(60 citation statements)
references
References 34 publications
3
57
0
Order By: Relevance
“…Yang et al and Sharma et al have reported that E 1 2g and A 1 g are the most intense vibrational modes for molybdenum dichalcogenides. [21][22][23] Peaks corresponding to E 1 2g and A 1 g modes for MoS 2 (Figure 9a) are prominent at 384.6 and 410.2 cm À1 , respectively. A 1 g indicates an out-of-plane symmetric displacement of S atoms, whereas E 1 2g suggests an in-layer displacement.…”
Section: Resultsmentioning
confidence: 99%
“…Yang et al and Sharma et al have reported that E 1 2g and A 1 g are the most intense vibrational modes for molybdenum dichalcogenides. [21][22][23] Peaks corresponding to E 1 2g and A 1 g modes for MoS 2 (Figure 9a) are prominent at 384.6 and 410.2 cm À1 , respectively. A 1 g indicates an out-of-plane symmetric displacement of S atoms, whereas E 1 2g suggests an in-layer displacement.…”
Section: Resultsmentioning
confidence: 99%
“…This was possibly related to the different grain size, which may have resulted in a discrepancy of the pressure point of phase transition and the width of the phase coexistence regime reported by Olsen et al and us. To check the high-pressure metallization of nanocrystalline rutile, we performed temperaturedependent electrical conductivity measurements up to 25.0 GPa at 120-240 K. As usual, the electrical conductivity of sample increased with increasing temperature for semiconductor, whereas the metal To check the high-pressure metallization of nanocrystalline rutile, we performed temperaturedependent electrical conductivity measurements up to 25.0 GPa at 120-240 K. As usual, the electrical conductivity of sample increased with increasing temperature for semiconductor, whereas the metal exhibited a negative relation between the temperature and electrical conductivity [15][16][17][18]. The temperature-dependent electrical conductivity measurements of nanocrystalline rutile at selected pressures are plotted in Figure 5.…”
Section: Resultsmentioning
confidence: 99%
“…Therefore, the metallization of nanocrystalline rutile is attributed to the enhancement of defect concentration rather than the closure of bandgap. exhibited a negative relation between the temperature and electrical conductivity [15][16][17][18]. The temperature-dependent electrical conductivity measurements of nanocrystalline rutile at selected pressures are plotted in Figure 5.…”
Section: Resultsmentioning
confidence: 99%
See 2 more Smart Citations