Pressure-Induced Phonon Frequency Shifts Measured by Raman Scattering

Raman Scattering Studies of Solid-Phase Species

“…Further, as expected, compression of the sample produces variations in the Raman signal which are similar to those observed for sample cooling (Ref. 7).…”

Growth and characterization of ZnO films on (001), (100) and (010) LiGaO2 substrates

“…The E 1 (LO) mode positioned at about 580 cm -1 attributable to the formation of zinc interstitials and oxygen vacancies is not found in this figure, suggesting relatively low defect density in these films [18,19]. For ZnO, the E 2 (high) mode frequency shifts relative to the single crystal value can be used to estimate residual stress in thin films [20,21]. The E 2 frequency of the (0 0 0 1) ZnO film on LGO (0 0 1) is 436 cm -1 , which has a red shift as compared with that of bulk ZnO, indicating the c-plane film is under a residual tensile stress.…”

“…This is very crucial in growing high-quality LiGaO 2 crystal. The optimum growth conditions were found to be a pulling rate of 2-3 mm/h and rotation rate of [20][21][22][23][24][25][26][27][28][29][30] rpm. Finally, a colorless and transparent LiGaO 2 crystal was obtained.…”

Growth and in-plane optical anisotropy of crystalline quality enhanced non-polar m-plane ZnO(GaN) films on trenched (100) LiAlO2 substrates

“…2). Using the pressure coefficient (5.2 Â 10 À9 cm À1 Pa À1 ) determined by Mitra et al [9], we calculated that the as-prepared thin films are under slight compressive stress, about 1.5 Â 10 8 Pa for S 1 and 2.0 Â 10 8 Pa for S 2 , which are less than those of ZnO epilayers deposited on other substrates [10]. Fig.…”