In this work, we have synthesized 2D MoS2/MoSe2 heterostructures by chemical vapor deposition (CVD) in a
one-pot,
two-step configuration: the second crystal was directly grown on top
of the first, without mechanical transfer. Indeed, most vertically
stacked HSs go through nanomechanical manipulations resulting in nonhomogeneous
residual strain, polymer residues or mechanical fracture. Also, among
others, an advantage of such heterostructures is that they can be
considered as pristine vertical HS, since they have a clean interface
between layers. Moreover, another interest in studying such material
is that the bottom and top layers are almost the same. They only differ
by the chemical nature of the chalcogen atom, and consequently the
size of the metal-chalcogen bond is slightly different. The photoluminescence
and vibrational analyses indicate shifts in the band positions when
compared to monolayer MoS2 or MoSe2. We propose
that this behavior is mainly driven by a mechanical strain that originates
from the synthesis, since the HSs tend to counterbalance the lattice
mismatch between the top and the bottom crystals. Our findings are
corroborated by DFT calculations, where electron and phonon dispersions
of strained materials reproduce qualitatively well the experimental
data. Also this work permits us to compare the interaction between
constituent layers of HS assembled by transfer or by direct growth
and their role to tune the physical properties of those nanomaterials
for specific applications in nanoelectronics.