2022 45th International Spring Seminar on Electronics Technology (ISSE) 2022
DOI: 10.1109/isse54558.2022.9812830
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Pressureless Direct Bonding of Au Metallized Substrate with Si Chips by Micro-Ag Particles

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Cited by 3 publications
(1 citation statement)
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“…According to previous reports [25,26], different sintering temperatures, pressures, heating times, and sizes and shapes of the Ag particles all affect the sintered Ag microstructure and sintering performance. The classical sintering process can be carried out at temperatures ranging from 200 to 300 • C with the sintering pressure range from 10 MPa to 40 MPa [27]. However, the pastes in which the powder particles are a few to several micrometers in size are processed at temperatures above 250 • C and at pressures higher than 10 MPa, which may increase the risk of chip damage and increase the process difficulty of chip fabrication.…”
Section: Introductionmentioning
confidence: 99%
“…According to previous reports [25,26], different sintering temperatures, pressures, heating times, and sizes and shapes of the Ag particles all affect the sintered Ag microstructure and sintering performance. The classical sintering process can be carried out at temperatures ranging from 200 to 300 • C with the sintering pressure range from 10 MPa to 40 MPa [27]. However, the pastes in which the powder particles are a few to several micrometers in size are processed at temperatures above 250 • C and at pressures higher than 10 MPa, which may increase the risk of chip damage and increase the process difficulty of chip fabrication.…”
Section: Introductionmentioning
confidence: 99%