2019
DOI: 10.1021/jacs.9b05705
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Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate

Abstract: Direct chemical vapor deposition growth of high quality graphene on dielectric substrates holds great promise for practical applications in electronics and optoelectronics. However, graphene growth on dielectrics always suffers from the issues of inhomogeneity and/or poor quality. Here, we first reveal that a novel precursormodification strategy can successfully suppress the secondary nucleation of graphene to evolve ultrauniform graphene monolayer film on dielectric substrates. A mechanistic study indicates t… Show more

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Cited by 66 publications
(48 citation statements)
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“…In the previous reports, the critical step for graphene growth on glass was determined by the reaction rate at the edges of graphene domains with the active carbon fragments . Water was proposed to play an important role in reducing the energy barrier for the growth of graphene, and in reducing the binding energy between the graphene edge and the SiO 2 /Si substrate . Therefore, with the designed H 2 O‐etchant‐promoted growth process, the graphene edge on glass should be relatively easy to react with the carbon atoms, leading to the improved growth rate of graphene on glass.…”
Section: Resultsmentioning
confidence: 99%
“…In the previous reports, the critical step for graphene growth on glass was determined by the reaction rate at the edges of graphene domains with the active carbon fragments . Water was proposed to play an important role in reducing the energy barrier for the growth of graphene, and in reducing the binding energy between the graphene edge and the SiO 2 /Si substrate . Therefore, with the designed H 2 O‐etchant‐promoted growth process, the graphene edge on glass should be relatively easy to react with the carbon atoms, leading to the improved growth rate of graphene on glass.…”
Section: Resultsmentioning
confidence: 99%
“…和钛在石墨烯的合成中起着重要的作用. 近期, 通过对 绝缘基底的氢化使绝缘基底上成核点均匀可控 [75] , 以 [78,79] 的引入促进了石墨烯在介质衬底上的生长, 金属蒸汽是由Cu、Ga等固体或液体金属在高温下放 置在CVD生长炉中产生的. 镓蒸汽 [80,81] 用于制备石墨 烯, 由于在相同温度下镓的蒸汽压比铜高得多, 因此 更适合于石墨烯的催化生长.…”
Section: 低温生长是由于Sto衬底的催化能力 其中表面的氧unclassified
“…In another attempt, Wang et al . chose alcohol to in situ generate water in the CVD system . They claimed that the trace of water can effectively suppress the repeated nucleation, thereby achieving a uniform monolayer graphene film on dielectric substrates.…”
Section: Gaseous‐promotor‐assisted Growth: Oxygen‐containing Speciesmentioning
confidence: 99%
“…It can be expected that the substrate surface can be effectively modified with the oxygen or hydroxyl species by introducing oxygen‐contained promotors . In fact, theoretical calculations indicate that the presence of oxygen or hydroxyl species on the surface can change the binding energy between the carbon fragment and substrate, and subsequently, dictate the synthesis of as‐fabricated graphene …”
Section: Gaseous‐promotor‐assisted Growth: Oxygen‐containing Speciesmentioning
confidence: 99%