Primary recoil spectra and subcascade effects in ion bombardment experiments

A Framework for Understanding Displacement Damage Mechanisms in Irradiated Silicon Devices

“…Also shown are results of Wood et al [10]. The lack of a dependence on primary recoil energy confirms their findings and those of More [11].…”

“…The Mueller work appears to disagree with the simulations of Wood [10] and More [11] that show a significant increase with increasing PKA energy in the displacement damage energy deposited into subcluster production by high-energy secondary recoils. We conducted BCA (binary collision approximation) simulations of Si atoms impinging on an amorphous Si target using the SRIM code [15] and obtained results that confirm the Wood and More findings.…”

“…Wood [10] obtained 0.57 for that fraction based on calculations made at three PKA energies, as illustrated. This constant energy partitioning depends on the existence of a bounded region for single cluster creation, as established by Wood [10] and More [11], and on an apparent invariance with PKA energy of the relative probability of recoils having an energy in that single-cluster formation regime versus having an energy in the isolated-defect formation regime.…”

“…The key point employed here from the Wood and More work is that the ratio of the displacement energy deposited in producing subclusters to that deposited in producing isolated defects is a constant for all PKA energies [10], [11]. For radiationinduced increases in dark current, NIEL scaling is explained in terms of subclusters dominating device behavior.…”

“…Wood [10] and More [11] performed displacement damage simulations and measurements that are relevant to the present modeling. Their key finding is that, for a given primary knock-on atom (PKA) of sufficient energy, the ratio of the energy deposited into the production of defects contained in subclusters to the energy deposited into the production of isolated defects is essentially constant and independent of PKA energy.…”