By using cleanroom-based lithographic procedures to produce identical electrode arrays, we have fabricated dielectrophoretic nanowires that vary in their conductance by ±10%. Transmission electron microscopy established the presence of interconnect segments composed of densely aggregated nanoparticles and of individual nanorods lying in the current-carrying path. The current-voltage profiles of these interconnects exhibited barriers to charge transport at temperatures less than ϳ225 K; furthermore, their conductances increased exponentially with temperature with an activation energy comparable to the nanorod charging energy. These results indicate that the Coulomb blockade associated with individual nanorods in the interconnects is the primary conductance-limiting feature.Dielectrophoretic assembly has emerged as a promising approach to in-parallel device fabrication that exploits the spontaneous behavior of building block populations. In dielectrophoretic assembly, the dipolar term of the interparticle potential of a colloidal dispersion is amplified, leading to the single-step assembly and interfacing of electrical interconnects with surrounding circuitry. 1,2 Several groups have used this approach to integrate nanowires, nanoparticles, and interconnects with existing electronics. 2-5 Because of the lack of reproducibility in the fabrication conditions of individually fabricated samples, there have been relatively few detailed investigations of the charge-transport properties of dielectrophoretic interconnects. 3 Here, we have employed standard photolithography to fabricate sets of identical electrode pairs on 500 m thick quartz substrates, eliminating much of the nonuniformity that hampers wire-by-wire assembly and enabling the simultaneous fabrication of up to six interconnects under identical growth conditions ͑electrode-geometry, voltage amplitude and frequency, and concentration of nanoparticle solution͒. Figure 1͑a͒ depicts the simple circuit that facilitates the targeted placement of reproducible interconnects. An optical micrograph depicts the three electrode pairs, between which three simultaneously grown interconnects span the 100 m gaps. The initial metal layer on these substrates was 100 nm of Ti onto which 500 nm of Al was deposited.We have previously demonstrated the dielectrophoretic assembly of interconnects composed of 3.7 nm diameter CdS nanoparticles. 6 However, this work 6 stopped short of revealing the structural and transport properties of these interconnects because the small size of the CdS nanoparticles inhibited resolution of the mesoscopic ͑i.e., particle level͒ structure of the interconnect. To gain this knowledge, the present study employs ϳ30 nm gold nanorods as the building blocks, easily visible with a transmission electron microscope ͑TEM͒ of moderate resolving power. We employed an established wet chemical approach to synthesize the gold nanorods. 7,8 The resulting stock solution of nanorods contained large excesses of cetyl trimethylammonium cations and bromide anions that pre...