Printability study with polarisation capable AIMS<sup>TM</sup>fab 193i to study polarisation effects

The bilayer approach of embedded attenuated Phase Shift Masks (EAPSM), causing phase shift and transmission by two different materials offers advantages compared to the single layer solution. Three different PSM blank types with the stacks Ta/SiO 2 -6%, Ta/SiO 2 -30% and Ta/SiON-30% have been manufactured and characterized. Afterwards, identical line pattern of different feature sizes and duty cycles have been patterned in each of the three PSM types as well as in MoSi for reference. Using the AIMS™ fab 193i tool we have evaluated the lithographic performance of the four PSM in terms of contrast, normalized image slope (NILS), process latitude and process window. Improvements of up to 20% contrast, 10% NILS and 65% exposure latitude have been achieved for the Ta/SiO 2 6% stack compared to the MoSi material with the same transmittance. In addition, the high transmission PSM clearly offers advantages in contrast, NILS and exposure latitude especially for smaller features.

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Printability study with polarisation capable AIMS^TMfab 193i to study polarisation effects

Cited by 4 publications

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Optimum optics for die-to-wafer-like image mask inspection

Optimum optics for die-to-wafer-like image mask inspection

First results for hyper NA scanner emulation from AIMS 45-193i

Extended process window using variable transmission PSM materials for 65-nm and 45-nm node

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Printability study with polarisation capable AIMSTMfab 193i to study polarisation effects

Cited by 4 publications

References 0 publications

Optimum optics for die-to-wafer-like image mask inspection

Optimum optics for die-to-wafer-like image mask inspection

First results for hyper NA scanner emulation from AIMS 45-193i

Extended process window using variable transmission PSM materials for 65-nm and 45-nm node

Contact Info

Product

Resources

About

Printability study with polarisation capable AIMS^TMfab 193i to study polarisation effects