2021
DOI: 10.1021/acsnano.0c06791
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Printable Single-Unit-Cell-Thick Transparent Zinc-Doped Indium Oxides with Efficient Electron Transport Properties

Abstract: Ultrathin transparent conductive oxides (TCOs) are emerging candidates for next-generation transparent electronics. Indium oxide (In2O3) incorporated with post-transition-metal ions (e.g., Sn) has been widely studied due to their excellent optical transparency and electrical conductivity. However, their electron transport properties are deteriorated at the ultrathin two-dimensional (2D) morphology compared to that of intrinsic In2O3. Here, we explore the domain of transition-metal dopants in ultrathin In2O3 wi… Show more

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Cited by 39 publications
(39 citation statements)
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“…Recently, Jannat et al. selected Zn as a dopant to prepare doped liquid metals with different concentrations (between 0 and 5 atomic %), achieving large-area 2D indium zinc oxide (IZO) by utilizing the same squeeze-printing method mentioned above ( Jannat et al., 2021 ). The optimum electron mobility is realized in the sample with lower Zn dopant concentrations, presenting an almost 20 times improvement compared to that of pure 2D In 2 O 3 .…”
Section: Fabrication Methods Of 2d Metal Oxidesmentioning
confidence: 99%
“…Recently, Jannat et al. selected Zn as a dopant to prepare doped liquid metals with different concentrations (between 0 and 5 atomic %), achieving large-area 2D indium zinc oxide (IZO) by utilizing the same squeeze-printing method mentioned above ( Jannat et al., 2021 ). The optimum electron mobility is realized in the sample with lower Zn dopant concentrations, presenting an almost 20 times improvement compared to that of pure 2D In 2 O 3 .…”
Section: Fabrication Methods Of 2d Metal Oxidesmentioning
confidence: 99%
“…13a-c). 117 These studies highlight that liquid metal derived nanosheets possess electronic properties that are defined by the fundamental nature of the synthesised material. While being comparatively simple, the printing methods can produce excellent semiconductors that may find application in practical devices.…”
Section: Field-effect Transistors (Fets)mentioning
confidence: 99%
“…Some new synthetic techniques can also be used to prepare some emerging asymmetric materials [126][127][128]. For instance, zinc-doped indium oxide has been successfully printed on the silica surface to obtain asymmetric 2D silica nanocomposite [129].…”
Section: Asymmetric Silica-based Nanoparticlesmentioning
confidence: 99%