Printed Organic Circuits for Reading Ferroelectric Rewritable Memory Capacitors

Abstract

-We demonstrate an inkjet-printed organic thin-film transistor (OTFT) circuit for reading ferroelectric (FE) nonvolatile rewritable memories. With the large difference in polarization charge between FE memory states, we implement a single-OTFT gain stage with latch and show that a gain of −2.8 is sufficient to distinguish memory states. This paper evaluates the effect of device variations on the yield of this readout circuit.Index Terms-Ferroelectric (FE) memory, inkjet printing, organic thin-film transistor (OTFT).

Recent progress in printable organic field effect transistors

“…121 Instead of Cytop, another fluoropolymer Teflon was used by Ng et al for the thin low-k capping layer, the Teflon/P(VDF-TrFE-CFE) bilayers, which were coated to form thick gate dielectrics (800 ~ 900 nm), facilitated the fabrication of stable printed OFETs with high performance (Figure 5(c)). 122 Furthermore, high performance printed circuits have also been demonstrated, pulsed voltage multiplier, NAND and NOR gates, ring oscillators, and single-OFET gain stage with latch. 118,122,123 120 Copyright 2017, IEEE.…”

“…122 Furthermore, high performance printed circuits have also been demonstrated, pulsed voltage multiplier, NAND and NOR gates, ring oscillators, and single-OFET gain stage with latch. 118,122,123 120 Copyright 2017, IEEE. (c) Transfer characteristics of a typical printed OFET using Teflon/P(VDF-TrFE-CFE) bilayer as gate dielectric before and after 5-min bias stress.…”

“…(c) Transfer characteristics of a typical printed OFET using Teflon/P(VDF-TrFE-CFE) bilayer as gate dielectric before and after 5-min bias stress. Reprinted with permission 122. Copyright 2016, IEEE.…”

Flexible organic field-effect transistors-based biosensors: progress and perspectives

“…OFETs have many advantages over traditional silicon-based FETs, including a wide range of available materials, simple processing, low cost, large-area processing ease, and compatibility with flexible substrates. [ 2 , 3 ] Therefore, OFETs are promising for many applications such as organic displays [ 4 , 5 ], smart cards [ 6 , 7 ], large-scale integrated circuits [ 2 , 8 ], sensors [ 9 – 12 ], and storage devices [ 13 – 15 ].…”

Vacuum‐free fabrication of a low‐voltage multi‐bit memory device based on a ferroelectric polymer and photosensitive film

“…Ferroelectricity can be used in a memory device because the magnitude and direction of polarisation can be controlled according to the magnitude and direction of the voltage applied from the outside, and the polarisation state can be maintained even without external stimulation. Therefore, it is possible to apply a hard‐to‐imagine application in silicon processes such as flexible memory [1–3] and printed electronic device memory [4–6] by combining mechanical flexibility and low‐temperature processability, which are characteristics of polymers. Recently, many ferroelectric polymer‐based multi‐bit memory devices have been developed by utilising the characteristics of ferroelectric polymers [7–9].…”