Printed, sub‐2V ZnO Electrolyte Gated Transistors and Inverters on Plastic

Abstract

Printed, flexible sub-2 V ZnO electrolyte gated transistors (EGTs) are demonstrated. ZnO EGTs with high-capacitance ion-gel gate insulators are printed on a kapton substrate and the devices exhibit high electron mobility (1.61 cm(-2) V(-1) s(-1) ), low operation voltage (<2 V), and good electrical/mechanical stabilities.

Metal oxide semiconductor thin-film transistors for flexible electronics

“…Due to their high T G % 360 C, PI substrates with thickness ranging from %3 to 50lm are widely used. 83,145,191,193,[197][198][199][220][221][222][223] Polyarylate (PAR) foils have also been employed, 192,200,224,225 given their good temperature stability (T G % 330 C), combined with a colorless transparency in the visible range. If the semiconductor deposition is performed at lower temperatures ( 150 C), also PES foils (T G around 200 C) can be utilized.…”

“…II B, electrolyte dielectrics allow achieving high C ox values and therefore low operation voltage typically below 62 V. Examples of electrolyte gated n-type solution-processed metal oxide semiconductor TFTs have been successfully demonstrated on PEN, PI, and paper substrates. 190,193,231 Due to the good conformal coating, electrolyte gate dielectrics facilitate also the deposition of structured/rough metal oxide semiconductors, especially nanoparticles (NPs) and nanorods (NRs).…”

“…The contact materials used in n-type solution-processed metal oxide semiconductor TFTs are generally similar to those employed for their vacuum-processed counterparts. Source/drain and gate electrodes are mostly made of Al and Au, 145,193,231 but also of transparent conducting metal oxides, such as ITO, 76,83,190,196,197 IZO, 220,221 or zinc indium tin oxide (ZITO). 192 In addition to the above mentioned materials, gate contacts are also made of Cr 145 or dual layers of Cr/Au, 220,221 which yield a good adhesion.…”

“…192 In addition to the above mentioned materials, gate contacts are also made of Cr 145 or dual layers of Cr/Au, 220,221 which yield a good adhesion. Aiming towards completely solution-processed TFTs, contact materials have also been processed from solution, employing solution-processed poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) gate electrodes 193 or solution-deposited ITO source/drain and gate contacts. 83 e. Passivation layers.…”

Protonic/electronic hybrid oxide transistor gated by chitosan and its full-swing low voltage inverter applications

“…9,10 Recently, solid state electrolytes have also been proposed to act as gate dielectrics. 11,12 With the unique ionic/electronic hybrid behaviors, these electrolyte gated EDL transistors have been proposed for applications in pH sensors, 13 logic circuits, [14][15][16] artificial synapses, 17,18 etc.…”