Probe-induced resistive switching memory based on organic-inorganic lead halide perovskite materials

Shaban, Abbas; Joodaki, Mojtaba; Mehregan, Saeed; Rangelow, Ivo W.

doi:10.1016/j.orgel.2019.03.019

Cited by 15 publications

(15 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Besides optoelectronic devices such as solar cells and LED devices, HOIP materials also show their great potential in memory devices on next‐generation computing systems. Reliable, fast response HOIP‐based memory devices have been demonstrated by different researchers . Yoo et al prepared HOIP‐based memory devices (Au/ HOIP/FTO) with small on–off voltage and remarkable RS behaviors .…”

Section: Ion Migration Induced Phenomena In Hoipsmentioning

confidence: 99%

“…Ironically, the ion migration process was also found to promote the performance of perovskite devices under continuous light illumination . Moreover, ion migration has found important application in perovskite resistance‐switching memory devices . Finally, by manipulating the ion migration progress under different electric field, dynamic electronic junctions are demonstrated and can be used as fast response photodetectors .…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Ion Migration: A “Double‐Edged Sword” for Halide‐Perovskite‐Based Electronic Devices

2019

View full text Add to dashboard Cite

Ion migration has been regarded as one of the most interesting and mysterious processes in halide-perovskite-based electronic devices. On the one hand, ion migration contributes to the hysteresis and poor stability problems of perovskite devices. On the other hand, the mobile ions can passivate the interfaces of perovskite devices, leading to improved carrier transportation and collection. This article gives a critical review on the ion migration in halide perovskite materials. It starts with a brief introduction of the origin and nature of the ion migration problem in perovskite materials. Next, the electric, photoelectric, and structural phenomena resulting from ion migration and their influence on the performance and stability of the perovskite devices are focused on. The recent literature work on the characterization of ion migration is reviewed and the characterization techniques are highlighted. Furthermore, different approaches that can suppress the ion migration process are also introduced. Finally, ion migration in the emerging all-inorganic halide perovskite materials is compared with that in hybrid halide perovskite materials, and the implications on device design and performance are discussed.

show abstract

Section: Ion Migration Induced Phenomena In Hoipsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Ion Migration: A “Double‐Edged Sword” for Halide‐Perovskite‐Based Electronic Devices

2019

View full text Add to dashboard Cite

show abstract

“…Another experimental observation based on Time of Flight Secondary Ion Mass Spectrometry (TOF-SIMS) that 18 O ions mainly exist in the surface vicinity within the positively biased region of NiO films reveals that the depletion or accumulation of oxygens ions at the bottom electrode interface caused by oxygen migration within the NiO film changes the film conductivity [78]. Additionally, probe-induced resistive switching behavior has been found on organic-inorganic lead halide perovskite materials (CH 3 NH 3 PbI 3−x Cl x ) [79]. As illustrated in Figure 11(a), the media stack is made up of a CH 3 NH 3 PbI 3−x Cl x film deposited on FTO substrate that also serves as a bottom electrode.…”

Section: Recent Progress On Probe Memoriesmentioning

confidence: 99%

Recent Progress on Probe-Based Storage Devices

Liu

Wang

2019

IEEE Access

View full text Add to dashboard Cite

Prosperity of information technology triggers a tremendous amount of digital data that needs to be stored by storage memories with ultra-high capacity. Although probe-based memory has exhibited its superb storage merits, its developments to date, however, remain slow due to several physical limits. In order to overcome its drawbacks, and to further advance probe storage technologies, a comprehensive review regarding the current status and future prospect of probe-based memories become of importance. In this paper, we first presented the physical principles of various reported probe-based memories and their respective advantages/disadvantages, as well as their current status. Subsequently, up-to-date progress made on these probe memories and some novel probe memories concepts is proposed. The prospect of a probebased memory device is finally predicted.INDEX TERMS Phase-change materials, probe, capping, transmission.

show abstract

“…In particular, the greatest potential of ReRAM is that many switching materials could be selected. Recently, in addition to its photovoltaic applications, organic–inorganic metal halide perovskite has been demonstrated as an active layer in ReRAM cells, showing tunable and remarkable memory properties and flexibility [ 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 ]. Based on the various material systems of perovskite, the constituent tuning provides an influential factor in controlling the memory property; [ 34 ] but most of the research about the memory application of the three-dimensional (3D) perovskites is still focused on MAPbI 3 [ 22 , 23 , 25 , 27 , 28 , 29 , 30 ].…”

Section: Introductionmentioning

confidence: 99%

“…Based on the various material systems of perovskite, the constituent tuning provides an influential factor in controlling the memory property; [ 34 ] but most of the research about the memory application of the three-dimensional (3D) perovskites is still focused on MAPbI 3 [ 22 , 23 , 25 , 27 , 28 , 29 , 30 ]. Besides MAPbI 3 , some researchers have reported on the MAPbX 3 based ReRAM where X = Br or Cl or a mixture of I, Br, or Cl [ 21 , 26 , 33 ]. However, only very few studied the memory property of the 3D ABX 3 organic–inorganic metal halide while the A-site cation is not a pure MA.…”

Section: Introductionmentioning

confidence: 99%

Resistive Switching Property of Organic–Inorganic Tri-Cation Lead Iodide Perovskite Memory Device

et al. 2020

View full text Add to dashboard Cite

In this study, a glass/indium tin oxide (ITO)/formamidinium-methylammonium-cesium (FA-MA-Cs) tri-cation lead iodide perovskite/poly(methyl methacrylate (PMMA)/Al memory device with a controlled composition of (FA0.75MA0.25)1-xCsxPbI3 (x = 0–0.1) is demonstrated to exhibit bipolar resistive switching behavior. The tri-cation organic–inorganic metal halide perovskite film was prepared by a one-step solution process in which the amount of Cs was varied to modify the property of FA0.75MA0.25PbI3. It was found that the microstructure and defect properties of films are highly dependent on the contents of FA, MA, and Cs in the perovskite. The results found that 5% CsI doping is the optimized condition for improving the quality of FA0.75MA0.25PbI3, forming a high quality tri-cation perovskite film with a smooth, uniform, stable and robust crystalline grain structure. The resistive switching on/off ratio of the (FA0.75MA0.25)0.95Cs0.05PbI3 device is greater than 103 owing to the improved thin-film quality. Moreover, for the 5% CsI doped FA0.75MA0.25PbI3 films, the endurance and the stability of retention are better than the non-doped film. The improved microstructure and memory properties are attributed to the balance stress of FA/MA/Cs with different ionic size. It suggests the potential to achieve a desired resistive memory property of tri-cationic perovskite by carefully adjusting the cation ratios.

show abstract

Probe-induced resistive switching memory based on organic-inorganic lead halide perovskite materials

Cited by 15 publications

References 31 publications

Ion Migration: A “Double‐Edged Sword” for Halide‐Perovskite‐Based Electronic Devices

Ion Migration: A “Double‐Edged Sword” for Halide‐Perovskite‐Based Electronic Devices

Recent Progress on Probe-Based Storage Devices

Resistive Switching Property of Organic–Inorganic Tri-Cation Lead Iodide Perovskite Memory Device

Contact Info

Product

Resources

About