Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy Appl. Phys. Lett. 101, 152104 (2012) High quality ultrathin Bi2Se3 films on CaF2 and CaF2/Si by molecular beam epitaxy with a radio frequency cracker cell Appl. Phys. Lett. 101, 153105 (2012) Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission Appl. Phys. Lett. 101, 142109 (2012) Role of native defects in nitrogen flux dependent carrier concentration of InN films grown by molecular beam epitaxy J. Appl. Phys. 112, 073510 (2012) The adsorption-controlled growth of LuFe2O4 by molecular-beam epitaxy Using scanning tunneling microscopy, reflection high energy diffraction and magnetic optical Kerr effect measurements, growth mode and the magnetic properties of epitaxial Co films on Si(111) with epitaxial Cu(111) buffer layers of various thicknesses have been studied. The strained 3.5-monolayer-thick Cu/Si(111) film has been found to be an optimal buffer, in which case an almost ideal layer-by-layer like growth of Co is observed up to six Co monolayers, due to a negligible lattice mismatch. The coercivity of Co films grown in this layer-by-layer like fashion has been determined to be about 10 Oe, testifying to the high quality of the formed Co film and Co/Cu interface. Changeover of the Co film growth mode from layer-by-layer like to multilayer has been found to result in the transition of the film magnetic properties from isotropic to markedly uniaxially anisotropic.