Probing the Efficacy of Large-Scale Nonporous IGZO for Visible-to-NIR Detection Capability: An Approach toward High-Performance Image Sensor Circuitry

Abstract

The technological ability to detect a wide spectrum range of illuminated visible-to-NIR is substantially improved for an amorphous metal oxide semiconductor, indium gallium zinc oxide (IGZO), without employing an additional photoabsorber. The fundamentally tuned morphology via structural engineering results in the creation of nanopores throughout the entire thickness of ∼30 nm. See-through nanopores have edge functionalization with vacancies, which leads to a large density of substates near the conduction band minima and valence band maxima. The presence of nanoring edges with a high concentration of vacancies is investigated using chemical composition analysis. The process of creating a nonporous morphology is sophisticated and is demonstrated using a wafer-scale phototransistor array. The performance of the phototransistors is assessed in terms of photosensitivity (S) and photoresponsivity (R); both are of high magnitudes (S = 8.6 × 10 4 at λ ex = 638 nm and P inc = 512 mW cm 2− ; R = 120 A W 1− at P inc = 2 mW cm 2− for the same λ ex ). Additionally, the 7 × 5 array of 35 phototransistors is effective in sensing and reproducing the input image by responding to selectively illuminated pixels.

Low‐Temperature Plasma‐Assisted Growth of Large‐Area MoS2 for Transparent Phototransistors

“…However, in the absence of light, a slow decay of current is observed, which is attributed to the presence of hole trap at the subgap states. [36] The τ rise and τ fall are comparable with the previous reported values, suggesting the high potential of the fabricated MoS 2 phototransistors for image sensing. [30,[37][38][39] The transparent phototransistor fabricated on glass without any transfer process exhibited a high photoresponsivity under visible light.…”

Back-End-of-Line Compatible Large-Area Molybdenum Disulfide Grown on Flexible Substrate: Enabling High-Performance Low-Power Memristor Applications

“…Moreover, the chemical and elemental compositions of low-temperature-grown MoS 2 are explored using X-ray photoelectron spectroscopy (XPS). Deconvolution of core-level high-resolution spectra starts with internal calibration by fitting the C 1s spectrum centered at 284.8 eV for adventitious carbon which usually arises due to exposure in the atmosphere (Figures S4 and Table S1 (Supporting Information)) Figure f,g shows high-resolution XPS spectra consisting of a core-level spin–orbit split of Mo 3d along with S 2s.…”

Amorphous InGaZnO Thin-Film Transistors with Double-Stacked Channel Layers for Ultraviolet Light Detection

“…All the O1s spectra were calibrated by using the C1s (284.8 eV) as the reference [23][24][25][26], where the O1s peak was deconvoluted into three Gaussian fitting sub-peaks that approximately centered at 530.3 eV (O I ), 531.0 eV (O II ), and 532.2 eV (O III ), respectively. The low binding energy O I peak could be attributed to the oxygen bonds with metal, the high binding energy O III peak might be related to the hydrated oxides defects, and the middle binding energy O II peak was associated with oxygen vacancies (V O ) [26]. In order to characterize the variations of V O with the P O values for IGZO deposition, the peak area ratio of the O II over the total area of O1s peak (O Total = O I + O II + O III ) was calculated.…”

“…Figure 4 depicts the XPS spectra of O1s signals in the six a-IGZO films (samples A, B, C, D, E, and F) prepared at various P O values (0, 7, 14, 21, 40, and 56 mPa, respectively), corresponding to the channel-layer deposition conditions for the DSCL-TFTs shown in Figure 1.All the O1s spectra were calibrated by using the C1s (284.8 eV) as the reference[23][24][25][26], where the O1s peak was deconvoluted into three Gaussian fitting sub-peaks that approximately centered at 530.3 eV (O I ), 531.0 eV (O II ), and 532.2 eV (O III ), respectively. The low binding energy O I peak could be attributed to the oxygen bonds with metal, the high binding energy O III peak might be related to the hydrated oxides defects, and the middle binding energy O II peak was associated with oxygen vacancies (V O )[26]. In order to characterize the variations of V O with the P O values for IGZO deposition, the peak area ratio of the O II over the total area of O1s peak (O Total = O I + O II + O III ) was calculated.…”