Probing the interaction at the C60–SiC nanomesh interface

Template-Directed Molecular Assembly on Silicon Carbide Nanomesh: Comparison Between CuPc and Pentacene

“…This suggests a vacuum level shift relative to the Fermi level due to the formation of interface dipoles, which originate from electron transfer from CuPc or pentacene (electron donor) − to the SiC nanomesh. As previously reported, the weak charge transfer between C 60 and SiC nanomesh, which induces a +0.15 ± 0.05 eV vacuum level shift, is responsible for altering the fullerene growth from island mode to layer-by-layer mode within the first two layers. Therefore, the interaction which traps CuPc and pentacene inside the cells of SiC nanomesh is attributed to the weak interface dipoles.…”

“…This is due to the surface irregularity of the SiC nanomesh. 22 Another prominent feature is the bumps in the middle of the cells. This feature was observed in the work presented in previous papers, 20,23,24 but its origin is not understood.…”

“…The L and S vertices are not precisely located at the hexagon corners (Figure c). This is due to the surface irregularity of the SiC nanomesh . Another prominent feature is the bumps in the middle of the cells.…”

“…However, the deposition of C 60 on SiC nanomesh resulted in a close-packed wetting layer due to stronger intermolecular interactions relative to the moleculeϪ nanotemplate interaction. 22…”

“…Another corrugated surface, the 6√3 × 6√3 R30° reconstructed 6H-SiC(0001) surface (henceforth referred to as “SiC nanomesh” , ), with a periodicity of about 1.95 nm is another potential candidate for the formation of molecular arrays. However, the deposition of C 60 on SiC nanomesh resulted in a close-packed wetting layer due to stronger intermolecular interactions relative to the molecule−nanotemplate interaction …”