Probing the interface of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>Fe</mml:mtext></mml:mrow><mml:mn>3</mml:mn></mml:msub><mml:msub><mml:mtext>O</mml:mtext><mml:mn>4</mml:mn></mml:msub><mml:mo>/</mml:mo><mml:mtext>GaAs</mml:mtext></mml:mrow></mml:math>thin films by hard x-ray photoelectron spectroscopy

Paul, Markus; Müller, A.; Ruff, A.; Schmid, Benjamin; Berner, G.; Mertin, M.; Sing, M.; Claessen, R.

doi:10.1103/physrevb.79.233101

Cited by 22 publications

(16 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The shoulder was due to the overlap of the main peak with the oxide peak, which chemically shifted to higher binding energies, as reported for oxidized GaAs films 14,20 . As θ increases, the probe depth is reduced and the contribution of the interface is enhanced.…”

Section: Intensity I(e)supporting

confidence: 69%

Investigation of the Mn3−δGa/MgO interface for magnetic tunneling junctions

ViolBarbosa

Ouardi

Kubota

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

The Mn 3 Ga Heusler compound and related alloys are the most promising materials for the realization of spintransfer-torque switching in magneto tunneling junctions. Improved performance can be achieved by high quality interfaces in these multilayered structured devices. In this context, the interface between Mn 1.63 Ga and MgO is of particular interest because of its spin polarization properties in tunneling junctions. We performed a chemical characterization of the MgO/Mn 1.63 Ga junction by hard x-ray photoelectron spectroscopy. The experiment indicated the formation of Ga-O bonds at the interface and evidenced changes in the local environment of Mn atoms in the proximity of the MgO film. In addition, we show that the insertion of a metallic Mg-layer interfacing the MgO and Mn-Ga film strongly suppresses the oxidation of gallium.PACS numbers: 79.60. Jv, 79.60.Dp, 75.30.Gw, 75.70.AkThe engineering of a high performance magnetic tunneling junction (MTJ) is crucial for the emergence of a new class of non-volatile memories and spintronic devices. Directly related with these recent technologies, Mn 2 YZ Heusler compounds, where Y is a transition metal and Z is a main group element, have shown interesting properties such as high spin polarization, high Curie temperature (Tc), low net magnetic moment, and strong magneto-crystalline anisotropy 1 . Mn 3 Ga and related alloys appear as promising materials in the realization of switching type spin-transfertorque mangnetoresistive random access memories (STTMRAMs). Mn-Ga films present perpendicular magneto anisotropy (PMA) and a nearly compensated ferrimagnetic phase 2-6 . These characteristics are important for the reduction of the switching current and downscaling of the dimensions while maintaining thermal stability in STT-MRAM devices 7 . The full understanding and control of growth properties of the Mn-Ga/MgO system will open up avenues for the exploitation of Heusler compounds in ultra-high density memory technologies.The performance of MTJ devices is strongly influenced by the quality of the film interfaces. Long-range ordering of the two-dimensional interfaces is required for conservation of the electron moment transverse to the tunneling current propagation (k ).8 The integration of Heusler compounds in MTJs has been successfully demonstrated for Co 2 MnSi 9,10 . The great advantage of the Mn 2 YZ family over other Heuslers is the tetragonal distortion of the crystalline structure leading to the PMA. This allows an unique combination of high-spin polarization with perpendicular magnetization in MTJs. Recent studies on the engineering of MTJs using Mn-Ga alloys by Kubota et a) Electronic mail: carlos.barbosa@cpfs.mpg.de al. 4,11,12 resulted in the optimized layered structure: Cr buffer/Mn-Ga/MgO/CoFe. The MgO grows compressed on the Mn-Ga structure with a lattice mismatch of approximately 7%4 , which can cause lattice dislocations reducing the crystalline ordering. An insertion of a 4Å metallic Mg layer interfacing MgO and Mn-Ga promotes a slight increase of the ...

show abstract

Section: Intensity I(e)supporting

confidence: 69%

Investigation of the Mn3−δGa/MgO interface for magnetic tunneling junctions

ViolBarbosa

Ouardi

Kubota

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…For example, it has been shown that arsenic and gallium oxides exist after the deposition of magnetite onto GaAs. 2 In contrast, the oxidation state of the ZnO substrate does not change upon oxide deposition. The heterostructure has, however, a large lattice mismatch of Ϫ8.6% if one assumes that the O sublattices in both materials have to be aligned across the interface.…”

mentioning

confidence: 99%

Fe 3 O 4 / ZnO : A high-quality magnetic oxide-semiconductor heterostructure by reactive deposition

Paul

Kufer

Müller

et al. 2011

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

We demonstrate the epitaxial growth of Fe 3 O 4 films on ZnO by a simple reactive deposition procedure using molecular oxygen as an oxidizing agent. X-ray photoelectron spectroscopy results evidence that the iron-oxide surface is nearly stoichiometric magnetite. X-ray diffraction results indicate monocrystalline epitaxy and almost complete structural relaxation. Scanning transmission electron micrographs reveal that the microstructure consists of domains which are separated by antiphase boundaries or twin boundaries. The magnetite films show rather slow magnetization behavior in comparison with bulk crystals probably due to reduced magnetization at antiphase boundaries in small applied fields.

show abstract

“…They also calculated the carrier density as a function of the LaAlO 3 layer thickness. In another investigation, Paul et al [36] used energy dependent HAXPES to evaluate thickness of the interface in a Fe 3 O 4 -GaAs bilayer sample which is a promising material for spintronics applications. Beni et al [37] used a similar approach to estimate layer resolved compositional variation in complex Al-Cr-Fe metallic alloy systems.…”

Section: Depth Profiling From Haxpesmentioning

confidence: 98%